Datasheet > DB102SDF01S

DB102SDF01S

更新时间： 2024-01-07 06:44:31

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THINKISEMI		/
页数	文件大小	规格书
2页	660K
描述
1.0 Ampere Surface Mount Glass Passivated Bridge Rectifier

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中文翻译

获取价格

数据手册

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DB102SDF01S 数据手册

DB101S thru DB107S

1.0 Ampere Surface Mount Glass Passivated Bridge Rectifier

DB101S thru DB107S

Pb Free Plating Product

DB-S/DF-S

Unit : inch (mm)

Features

• Glass passivated chip junction

• Low forward voltage drop

• High surge overload rating of 50 A peak

• Ideal for printed circuit board

.009(0.25)

.335(8.51)

.316(8.05)

Mechanical Data

.045(1.14)

.035(0.89)

• Case: Molded plastic, DB-S/DF-S

• Epoxy: UL 94V-0 rate flame retardant

• Terminals: Leads solderable per MIL-STD-202,

method 208 guaranteed

.205(5.2)

.195(5.0)

• Mounting position: Any

Absolute Maximum Ratings and Characteristics

Ratings at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or

inductive load. For capacitive load, derate current by 20%.

DB101S DB102S DB103S DB104S DB105S DB106S DB107S

Unit

Parameter

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Symbols

V_RRM

V_RMS

V_DC

DF005S DF01S DF02S DF04S DF06S DF08S DF10S

100 200 400 600 800 1000

70 140 280 420 560 700

Maximum DC Blocking Voltage

100 200 400 600 800 1000

Maximum Average Forward Rectified Current at T_A= 40 C

I_(AV)

Peak Forward Surge Current 8.3 ms Single Half-sine-wave

Superimposed on Rated Load (JEDEC Method)

I_FSM

V_F

I_R

Maximum Forward Voltage at 1 A

1.1

Maximum Reverse Current at Rated at T_A= 25 C

DC Blocking Voltage

Typical Junction Capacitance ¹⁾

500

µA

at T_A= 125 C

C_J

^OC/W

^OC

Typical Thermal Resistance ²⁾

R_θ_JA

R_θ_JL

Operating and Storage Temperature Range

T_J,T_S

-55 to +150

¹⁾Measured at 1 MHz and applied reverse voltage of 4 V

²⁾Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B with 0.5 X 0.5" (13X 13

mm) copper pads.

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