Datasheet > DB-3

DB-3

更新时间： 2024-09-25 06:52:19

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描述
SILICON BIDIRECTIONAL DIACS

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中文翻译

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数据手册

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DB-3 数据手册

DB-3, DB-4

SILICON BIDIRECTIONAL DIACS

The glass passivated, three-layer, two terminal, axial lead,

hermetically sealed diacs are designed specifically for

triggering thyristors. They demonstrate low breakover current

at breakover voltage as they withstand peak pulse current.

The breakover symmetry is within four volts with a typical

breakover voltage of DB-3 32 V, DB-4 40 V. These diacs are

intended for use in thyristor phase control, circuits for

lamp-dimming, universal-motor speed controls, and heat

controls.

Max. 0.5

Min. 27.5

Max. 3.9

Min. 27.5

Max. 1.9

Black

Cathode Band

Black

Part No.

XXX

Black

Storage Temperature Range T_S- 40 C to +150 C

Operating Temperature Range T_J- 40 C to +100 C

Glass Case DO-35

Dimensions in mm

MAXIMUM RATINGS at 50 C Ambient

Peak Current (10 µs duration, 120 cycle repetition rate) I_P± 2 A Max.

Peak output voltage e_P3 ± Volts Max.¹⁾

Characteristics at T_a= 25 C

Parameter

Symbol

Min.

Max.

Unit

DB-3

DB-4

Breakover Voltage

Breakover Currents

V_(BR)1and V_(BR)2

I_(BR)1and I_(BR)2

200

3.8

µA

Breakover Voltage Symmetry

[V_(BR)1]-[V_(BR)2

]

Dynamic Breakover Voltage

ΔI = [I_BRto I_F= 10 mA]

| ΔV ± |

Thermal Impedance Junction to Ambient Air

R_θJA

C/W

load up to 1500 W

3.3 K

DIAC

120 VAC

60 Hz

60~

120 V

TRIAC

0.1 uF

200 K

CIRCUIT FOR PEAK OUTPUT VOLTAGE TEST

BILATERAL

TRIGGER

DIAC

0.1 uF

100 V

TYPICAL DIAC-TRIAC FULL-WAVE PHASE

CONTROL CIRCUIT

中文翻译

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