Data Sheet
Band Switching Diode
DAN235E
Applications
Dimensions (Unit : mm)
Land size figure (Unit : mm)
High frequency switching
1.0
0.5
0.5
1.6±0.2
0.3±0.1
ꢀꢀꢀ 0.05
0.15±0.05
Features
(3)
0.7
1)Ultra small mold type. (EMD3)
2)High reliability
0~0.1
0.6
0.6
(1)
(2)
0.5
0.2±0.1
ꢀꢀ-0.05
EMD3
0.55±0.1
0.7±0.1
0.5
Construction
1.0±0.1
Silicon epitaxial
Structure
ROHM : EMD3
JEDEC : SOT-416
JEITA : SC-75A
dot (year week factory)
Taping specifications (Unit : mm)
φ1.55±0.1
φ1.50.1
2.0±0.05
0.3±0.1
4.0±0.1
0
ꢀꢀꢀꢀꢀ
0
1.8±0.1
φ0.5±0.1
0.9±0.2
Absolute maximum ratings (Ta=25°C)
Parameter
Power dissipation
Limits
Symbol
Pd
Unit
mW
V
150
35
Reverse voltage (DC)
Junction temperature
Storage temperature
VR
125
Tj
°C
55 to 125
Tstg
°C
Electrical characteristics (Ta=25°C)
Parameter
Forward voltage
Symbol
Min.
Typ.
Max.
1.0
10
Unit
V
Conditions
VF
IR
-
-
-
-
-
-
-
-
IF=10mA
VR=25V
Reverse current
nA
pF
Ω
Capacitance between terminals
Ct
rf
1.2
0.9
VR=6V , f=1MHz
IF=2mA , f=100MHz
Forward resistance
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2011.06 - Rev.C
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