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DAC08R000C PDF预览

DAC08R000C

更新时间: 2024-02-01 14:24:31
品牌 Logo 应用领域
亚德诺 - ADI 转换器
页数 文件大小 规格书
13页 127K
描述
Aerospace 8-Bit High Speed Multiplying DAC

DAC08R000C 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DIE
包装说明:DIE-16针数:0
Reach Compliance Code:compliantECCN代码:3A001.A.2.C
HTS代码:8542.39.00.01风险等级:5.68
最大模拟输出电压:18 V最小模拟输出电压:-10 V
转换器类型:D/A CONVERTER输入位码:BINARY
输入格式:PARALLEL, 8 BITSJESD-30 代码:R-XUUC-N16
JESD-609代码:e3最大线性误差 (EL):0.1%
湿度敏感等级:1标称负供电电压:-15 V
位数:8功能数量:1
端子数量:16最高工作温度:125 °C
最低工作温度:-55 °C封装主体材料:UNSPECIFIED
封装代码:DIE封装等效代码:DIE OR CHIP
封装形状:RECTANGULAR封装形式:UNCASED CHIP
峰值回流温度(摄氏度):225电源:+-15 V
认证状态:Not Qualified筛选级别:38535V;38534K;883S
子类别:Other Converters最大压摆率:4 mA
标称供电电压:15 V表面贴装:YES
技术:BIPOLAR温度等级:MILITARY
端子面层:Matte Tin (Sn)端子形式:NO LEAD
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

DAC08R000C 数据手册

 浏览型号DAC08R000C的Datasheet PDF文件第1页浏览型号DAC08R000C的Datasheet PDF文件第2页浏览型号DAC08R000C的Datasheet PDF文件第4页浏览型号DAC08R000C的Datasheet PDF文件第5页浏览型号DAC08R000C的Datasheet PDF文件第6页浏览型号DAC08R000C的Datasheet PDF文件第7页 
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:  
Outline letter  
Descriptive designator  
Terminals  
Package style  
E
F
2
GDIP1-T16 or CDIP2-T16  
GDFP2-F16 or CDFP3-F16  
CQCC1-N20  
16  
16  
20  
Dual-in-line  
Flat pack  
Square leadless chip carrier  
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,  
appendix A for device class M.  
1.3 Absolute maximum ratings. 1/  
Supply voltage (V+ to V-) .......................................................................................... 36 V dc  
Logic inputs ............................................................................................................... V- to (V- plus 36 V dc)  
Logic control voltage (V ) ........................................................................................ V- to V+  
LC  
Analog current outputs (at V- = 15 V) ........................................................................ 4.25 mA  
Reference input (V  
REF+  
to V  
) ............................................................................ V- to V+  
to V ) .............................................. ±18 V dc  
REF-  
Reference input differential voltage (V  
REF+  
REF-  
Reference input current (I  
Power dissipation (P ):  
) .............................................................................. 5.0 mA  
VREF+  
D
Cases E, F, and 2 .................................................................................................. 500 mW  
Maximum junction temperature (T ) .......................................................................... +150°C  
J
Lead temperature (soldering, 60 seconds) ................................................................ +300°C  
Storage temperature .................................................................................................. -65°C to +125°C  
Thermal resistance, junction-to-case (θ ) ................................................................ See MIL-STD-1835  
JC  
Thermal resistance, junction-to-ambient (θ ):  
JA  
Case E ................................................................................................................... 91°C/W  
Case F ................................................................................................................... 120°C/W  
Case 2 …………………………………………………………………………………….. 110°C/W  
1.4 Recommended operating conditions.  
Supply voltage (V ) .................................................................................................. ±15 V dc  
S
Input reference current (I  
REF  
) ................................................................................... 2.0 mA  
Ambient operating temperature range (T ) ............................................................... -55°C to +125°C  
A
1.5 Radiation features:  
Device types 01 and 02:  
Maximum total dose available (dose rate = 50 – 300 rads(Si)/s) ............. 100 krads(Si) 2/  
Device type 03:  
Maximum total dose available (dose rate 10 mrads(Si)/s) .................... 50 krads(Si) 3/  
1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the  
maximum levels may degrade performance and affect reliability.  
2/ Device types 01 and 02 may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate  
effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in  
MIL-STD-883, method 1019, condition A.  
3/ For device type 03, radiation end point limits for the noted parameters are guaranteed only for the conditions specified in  
MIL-STD-883, method 1019, condition D.  
SIZE  
STANDARD  
5962-89932  
A
MICROCIRCUIT DRAWING  
DLA LAND AND MARITIME  
REVISION LEVEL  
G
SHEET  
COLUMBUS, OHIO 43218-3990  
3
DSCC FORM 2234  
APR 97  

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