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DAC08R000C PDF预览

DAC08R000C

更新时间： 2024-01-03 06:56:42
品牌 Logo 应用领域
亚德诺 - ADI 转换器
页数 文件大小 规格书
13页 127K
描述
Aerospace 8-Bit High Speed Multiplying DAC

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DAC08R000C 技术参数

是否无铅： 含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：DIE
包装说明：DIE-16针数：0
Reach Compliance Code：compliantECCN代码：3A001.A.2.C
HTS代码：8542.39.00.01风险等级：5.68
最大模拟输出电压：18 V最小模拟输出电压：-10 V
转换器类型：D/A CONVERTER输入位码：BINARY
输入格式：PARALLEL, 8 BITSJESD-30 代码：R-XUUC-N16
JESD-609代码：e3最大线性误差 (EL)：0.1%
湿度敏感等级：1标称负供电电压：-15 V
位数：8功能数量：1
端子数量：16最高工作温度：125 °C
最低工作温度：-55 °C封装主体材料：UNSPECIFIED
封装代码：DIE封装等效代码：DIE OR CHIP
封装形状：RECTANGULAR封装形式：UNCASED CHIP
峰值回流温度（摄氏度）：225电源：+-15 V
认证状态：Not Qualified筛选级别：38535V;38534K;883S
子类别：Other Converters最大压摆率：4 mA
标称供电电压：15 V表面贴装：YES
技术：BIPOLAR温度等级：MILITARY
端子面层：Matte Tin (Sn)端子形式：NO LEAD
端子位置：UPPER处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

DAC08R000C 数据手册

 浏览型号DAC08R000C的Datasheet PDF文件第4页浏览型号DAC08R000C的Datasheet PDF文件第5页浏览型号DAC08R000C的Datasheet PDF文件第6页浏览型号DAC08R000C的Datasheet PDF文件第8页浏览型号DAC08R000C的Datasheet PDF文件第9页浏览型号DAC08R000C的Datasheet PDF文件第10页 
TABLE I. Electrical performance characteristics - Continued.  
Conditions 1/ 2/  
-55°C ≤ T ≤ +125°C  
Test  
Symbol  
Group A  
subgroups  
Device  
type  
Limits  
Unit  
A
V
= ±15 V, I  
= 2 mA  
S
REF  
unless otherwise specified  
Min  
Max  
1, 2, 3  
All  
48  
mW  
P
D
V
V
= ±5 V, I  
= 1 mA 4/  
Power dissipation 5/  
S
REF  
= +5 V, -15 V,  
4/  
S
136  
I
= 2 mA  
REF  
174  
±80  
150  
135  
V
= ±15 V, I  
= 2 mA 4/  
REF  
S
4/  
To ±1/2 LSB, T = +25°C 4/  
8
9
All  
01  
ppm/°C  
TCI  
FS  
Full scale tempco  
Settling time  
ns  
t
s
A
02, 03  
R
= 200 Ω, C = 0 pF,  
C
EQ  
dl/dt  
9
All  
All  
4
mA/µs  
Reference input slew rate  
R = 100 Ω, T = +25°C 4/  
L
A
Low to high transition, 4/  
Propagation delay all bits  
switched  
9, 10, 11  
60  
60  
ns  
t
t
PLH  
PHL  
V = 0.7 V, f = 250 kHz  
L
High to low transition, 4/  
V = 2.7 V, f = 250 kHz  
L
1/ Device types 01 and 02 supplied to this drawing have been characterized through all levels P, L, and R of irradiation.  
Device type 03 supplied to this drawing has been characterized at level L of irradiation. However, device types 01 and 02  
are only tested at the “R” level and device type 03 is only tested at the “L” level.  
Pre and Post irradiation values are identical unless otherwise specified in table I.  
2/ Device types 01 and 02 may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate  
effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in  
MIL-STD-883, method 1019, condition A for device types 01 and 02 and condition D for device type 03. Device type 03  
has been tested at low dose rate.  
3/ When the device is used in an un-biased state at high temperature only, and subsequently biased, the device supply  
currents may rise 30% above specification for as long as 30 seconds.  
4/ This parameter is not tested post-irradiation.  
5/ Power dissipation limits are guaranteed by supply current testing.  
SIZE  
STANDARD  
5962-89932  
A
MICROCIRCUIT DRAWING  
DLA LAND AND MARITIME  
REVISION LEVEL  
G
SHEET  
COLUMBUS, OHIO 43218-3990  
7
DSCC FORM 2234  
APR 97  
1...45678910...13

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