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DA5J109W0R PDF预览

DA5J109W0R

更新时间: 2024-11-09 21:06:31
品牌 Logo 应用领域
松下 - PANASONIC 光电二极管
页数 文件大小 规格书
4页 406K
描述
Mixer Diode, Very High Frequency, Silicon, HALOGEN FREE, SMINI5-F3-B, 5 PIN

DA5J109W0R 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-F5Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.60
风险等级:5.77配置:COMMON CATHODE, 4 ELEMENTS
最大二极管电容:2 pF二极管元件材料:SILICON
二极管类型:MIXER DIODE频带:VERY HIGH FREQUENCY
JESD-30 代码:R-PDSO-F5元件数量:4
端子数量:5最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

DA5J109W0R 数据手册

 浏览型号DA5J109W0R的Datasheet PDF文件第2页浏览型号DA5J109W0R的Datasheet PDF文件第3页浏览型号DA5J109W0R的Datasheet PDF文件第4页 
DA5J109W  
Silicon epitaxial planar type  
For high speed switching circuits  
DA6X109W in SMini5 type package  
Package  
Features  
Code  
Short reverse recovery time trr  
Contributes to miniaturization of sets, reduction of component count.  
Eco-friendly Halogen-free package  
SMini5-F3-B  
Pin Name  
1:Anode-1  
4: Anode-3  
2: Cathode-1, 2, 3, 4 5: Anode-4  
3: Anode-2  
Basic Part Number  
Marking Symbol: 28  
Packaging  
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  
Internal Connection  
5
1
4
3
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
VR  
Rating  
80  
Unit  
V
Reverse voltage  
Maximum peak reverse voltage  
Forward current  
VRM  
IF  
80  
V
2
100  
mA  
mA  
mA  
°C  
1
Peak forward current *  
IFM  
225  
2
Non-repetitive peak forwardsurgecurrent*  
IFSM  
Tj  
500  
Junction temperature  
150  
Storage temperature  
T
stg  
–55 to +150  
°C  
Note) 1: Value for single diode  
*
2: 1 t = 1 s  
*
Electrical Characteristics Ta = 25°C±3°C  
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
V
Forward voltage  
Reverse voltage  
Reverse current  
VF  
VR  
IR  
IF = 100 mA  
IR = 100 mA  
VR = 80 V  
1.2  
80  
V
100  
2
nA  
pF  
ns  
Terminal capacitance  
Ct  
VR = 0 V, f = 1 MHz  
Reverse recovery time *  
trr  
IF = 10 mA, VR = 6 V, Irr = 0.25 × IR  
3
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.  
2. Absolute frequency of input and output is 100 MHz  
3. : trr measurement circuit  
*
Input Pulse  
tp  
Output Pulse  
trr  
Bias Application Unit (N-50BU)  
tr  
t
10%  
IF  
t
A
90%  
VR  
I
rr = 0.25 ×  
F = 10 mA  
VR = 6 V  
tp = 2 µs  
tr = 0.35 ns  
δ = 0.05  
I
Pulse Generator  
(PG-10N)  
Rs = 50 Ω  
Wave Form Analyzer  
(SAS-8130)  
Ri = 50 Ω  
Publication date: July 2010  
ZKF00164AED  
1

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