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D970N08T PDF预览

D970N08T

更新时间: 2024-02-19 10:28:53
品牌 Logo 应用领域
英飞凌 - INFINEON 二极管
页数 文件大小 规格书
8页 211K
描述
Rectifier Diode, 1 Phase, 1 Element, 970A, 800V V(RRM), Silicon,

D970N08T 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.76
应用:GENERAL PURPOSE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:O-CEDB-N2最大非重复峰值正向电流:8800 A
元件数量:1相数:1
端子数量:2最大输出电流:970 A
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:800 V
表面贴装:YES端子形式:NO LEAD
端子位置:END处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

D970N08T 数据手册

 浏览型号D970N08T的Datasheet PDF文件第2页浏览型号D970N08T的Datasheet PDF文件第3页浏览型号D970N08T的Datasheet PDF文件第4页浏览型号D970N08T的Datasheet PDF文件第5页浏览型号D970N08T的Datasheet PDF文件第6页浏览型号D970N08T的Datasheet PDF文件第7页 
Datenblatt / Data sheet  
N
Netz-Gleichrichterdiode  
Rectifier Diode  
D970N  
Elektrische Eigenschaften / Electrical properties  
Höchstzulässige Werte / maximum rated values  
VRRM  
400 V  
Periodische Spitzensperrspannung  
Tvj = -40°C... Tvj max  
600 V  
repetitive peak reverse voltages  
800 V 1)  
1245 A  
Durchlaßstrom-Grenzeffektivwert  
maximum RMS on-state current  
IFRMSM  
IFAVM  
IFAVM  
IFRMS  
Dauergrenzstrom  
average on-state current  
Dauergrenzstrom  
average on-state current  
TC = 100 °C  
970 A  
1300 A  
TC = 55 °C, θ = 180°sin, tP = 10 ms  
2040 A  
Durchlaßstrom-Effektivwert  
RMS on-state current  
Stoßstrom-Grenzwert  
surge current  
Tvj = 25 °C, tP = 10 ms  
Tvj = Tvj max tP = 10 ms  
IFSM  
I²t  
10300 A  
8800 A  
Grenzlastintegral  
I²t-value  
Tvj = 25 °C, tP = 10 ms  
Tvj = Tvj max, tP = 10 ms  
530,45 10³A²s  
387,2 10³A²s  
Charakteristische Werte / Characteristic values  
Durchlaßspannung  
on-state voltage  
Tvj = Tvj max , iF = 2,3 kA  
Tvj = Tvj max , iF = 750 A  
vF  
max.  
max.  
1,45 V  
0,97 V  
Schleusenspannung  
threshold voltage  
Tvj = Tvj max  
Tvj = Tvj max  
Tvj = Tvj max  
V(TO)  
rT  
0,7 V  
mΩ  
0,31  
Ersatzwiderstand  
slope resistance  
A=  
B=  
C=  
D=  
4,891E-01  
1,323E-04  
2,391E-03  
1,340E-02  
Durchlaßkennlinie  
on-state characteristic  
200 A iF 4000 A  
vF = A + B iF + C ln ( iF + 1 ) + D  
iF  
max.  
Sperrstrom  
reverse current  
Tvj = Tvj max , vR = VRRM  
iR  
20 mA  
Thermische Eigenschaften / Thermal properties  
Innerer Wärmewiderstand  
thermal resistance, junction to case  
Kühlfläche / cooling surface  
beidseitig / two-sided, θ = 180°sin  
beidseitig / two-sided, DC  
Anode / anode, θ = 180°sin  
Anode / anode, DC  
RthJC  
max.  
max.  
max.  
max.  
max.  
max.  
0,057 °C/W  
0,053 °C/W  
0,094 °C/W  
0,090 °C/W  
0,134 °C/W  
0,130 °C/W  
Kathode / cathode, θ = 180°sin  
Kathode / cathode, DC  
Kühlfläche / cooling surface  
Übergangs-Wärmewiderstand  
RthCH  
0,015  
beidseitig / two-sided  
max.  
max.  
°C/W  
0,030 °C/W  
180  
thermal resistance, case to heatsink  
einseitig / single-sided  
Höchstzulässige Sperrschichttemperatur  
maximum junction temperature  
Tvj max  
Tc op  
Tstg  
°C  
Betriebstemperatur  
operating temperature  
-40...+180 °C  
-40...+180 °C  
Lagertemperatur  
storage temperature  
1) 800V auf Anfrage / 800V on request  
H.Sandmann  
date of publication: 2010-01-25  
prepared by:  
revision:  
3.1  
approved by: M.Leifeld  
A 11/10  
1/8  
IFBIP D AEC, 2010-01-20, H.Sandmann  
Seite/page  

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