UTCD965SS / D965ASS
NPN EPITAXIAL SILICON TRANSISTOR
LOW VOLTAGE HIGH CURRENT
NPN TRANSISTOR
FEATURES
*Collector current up to 5A
* D965SS : Collector-Emitter voltage up to 20 V
* D965ASS : Collector-Emitter voltage up to 30 V
2
1
APPLICATIONS
* Audio amplifier
* Flash unit of camera
* Switching circuit
3
MARKING(D965SS) MARKING(D965ASS)
SOT-23
D65
D65A
1: EMITTER 2: BASE 3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
Collector-base voltage
Collector-emitter voltage
D965SS
D965ASS
SYMBOL
RATING
40
UNIT
V
VCBO
VCEO
20
30
V
Emitter-base voltage
Collector dissipation(Ta=25°C)
Collector current
VEBO
Pc
Ic
7
750
5
V
mW
A
Junction Temperature
Storage Temperature
Tj
TSTG
150
-65 ~ +150
°C
°C
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
D965SS
SYMBOL
BVCBO
TEST CONDITIONS
Ic=100µA,IE=0
MIN TYP MAX UNIT
40
V
Ic=1mA,IB=0
BVCEO
20
30
7
V
D965ASS
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
BVEBO
ICBO
IEBO
IE=10µA,Ic=0
VCB=10V,IE=0
VEB=7V,Ic=0
V
nA
nA
100
100
1
UTC
UNISONIC TECHNOLOGIES CO. LTD
QW-R206-016,B