D965-R-AP

更新时间： 2024-02-03 14:38:15

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管
页数	文件大小	规格书
2页	93K
描述
Small Signal Bipolar Transistor, 5A I(C), 22V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3

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技术参数
数据手册

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D965-R-AP 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.66	Is Samacsys：	N
Base Number Matches：	1

D965-R-AP 数据手册

M C C

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20736 Marilla Street Chatsworth

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$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

D965-T

D965-R

Micro Commercial Components

Features

NPN

•

Power Dissipation: P_CM=0.75W @ T_amb=25?

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

Plastic-Encapsulate

Transistors

Collector Current: I_CM=5A

Marking: D965R/T

TO-92

Maximum Ratings

Symbol

V_CEO

V_CBO

V_EBO

I_C

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current, Continuous

Total Device Dissipation

Operating Junction Temperature

Storage Temperature

Rating

6.0

750

-55 to +150

Unit

P_D

T_J

T_STG

Electrical Characteristics @ 25 C Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

I_CBO

Collector-Emitter Breakdown Voltage*

(I_C=10mAdc, I_B=0)

Collector-Base Breakdown Voltage

(I_C=100µAdc, I_E=0)

Emitter-Base Breakdown Voltage

(I_E=100µAdc, I_C=0)

Collector Cutoff Current

(V_CB=20Vdc, I_E=0)

6.0

---

Vdc

---

Vdc

100

nAdc

I_EBO

Base Cutoff Current

(V_EB=3.0Vdc, I_C=0)

---

H_FE

DC Current Gain ( V_CE=2V, I_C=0.15mA)

( V_CE=2V, I_C=500mA)

( V_CE=2V, I_C=2000mA)

Collector-emitter Saturation Voltage

(I_C=3000mA, I_B=100mA)

150

340

150

---

950

---

1.EMITTER

2.COLLECTOR

3.BASE

V_CE(sat)

---

0.35

Classification of HFE @ ( VCE=2V, IC=500mA)

Rank

Range

DIMENSIONS

340-600

560-950

INCHES

MIN

.170

.550

.010

.130

.010

DIM

MAX

MIN

4.33

4.30

13.97

0.36

3.30

2.44

MAX

4.83

14.97

0.56

3.96

2.64

NOTE

.190

.590

.020

.160

.104

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Revision: 4

2007/02/23

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