5秒后页面跳转
D4457N PDF预览

D4457N

更新时间: 2024-02-19 21:28:01
品牌 Logo 应用领域
英飞凌 - INFINEON 整流二极管
页数 文件大小 规格书
8页 194K
描述
Netz-Gleichrichterdiode Rectifier Diode

D4457N 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.84应用:POWER
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:O-XEDB-N2
最大非重复峰值正向电流:52000 A元件数量:1
相数:1端子数量:2
最大输出电流:4460 A封装主体材料:UNSPECIFIED
封装形状:ROUND封装形式:DISK BUTTON
认证状态:Not Qualified最大重复峰值反向电压:200 V
表面贴装:YES端子形式:NO LEAD
端子位置:ENDBase Number Matches:1

D4457N 数据手册

 浏览型号D4457N的Datasheet PDF文件第2页浏览型号D4457N的Datasheet PDF文件第3页浏览型号D4457N的Datasheet PDF文件第4页浏览型号D4457N的Datasheet PDF文件第5页浏览型号D4457N的Datasheet PDF文件第6页浏览型号D4457N的Datasheet PDF文件第7页 
Datenblatt / Data sheet  
N
Netz-Gleichrichterdiode  
Rectifier Diode  
D4457N  
Elektrische Eigenschaften / Electrical properties  
Höchstzulässige Werte / maximum rated values  
VRRM  
IFRMSM  
IFAVM  
IFSM  
400 V  
600 V  
Tvj = -40°C... Tvj max  
PeriodischeSpitzensperrspannung  
repetitive peak reverse voltages  
Durchlaßstrom-Grenzeffektivwert  
7000 A  
maximum RMS on-state current  
TC = 111 °C  
TC = 130 °C  
Dauergrenzstrom  
average on-state current  
4460 A  
3520 A  
Stoßstrom-Grenzwert  
surge current  
Tvj = 25 °C, tP = 10 ms  
Tvj = Tvj max, tP = 10 ms  
60000 A  
52000 A  
Grenzlastintegral  
I²t-value  
Tvj = 25 °C, tP = 10 ms  
Tvj = Tvj max, tP = 10 ms  
I²t  
18000 10³A²s  
13500 10³A²s  
Charakteristische Werte / Characteristic values  
Durchlaßspannung  
on-state voltage  
Tvj = Tvj max , iF = 14,0 kA  
Tvj = Tvj max , iF = 4,5 kA  
vF  
max.  
max.  
1,36 V  
0,93 V  
Schleusenspannung  
threshold voltage  
Tvj = Tvj max  
Tvj = Tvj max  
Tvj = Tvj max  
V(TO)  
rT  
0,7 V  
m  
0,047  
Ersatzwiderstand  
slope resistance  
A=  
B=  
C=  
D=  
6,124E-01  
5,603E-06  
-2,629E-02  
7,702E-03  
Durchlaßkennlinie  
on-state characteristic  
1100 A iF 22000 A  
vF = A + B iF + C ln ( iF + 1 ) + D  
iF  
max.  
Sperrstrom  
reverse current  
Tvj = Tvj max , vR = VRRM  
iR  
60 mA  
Thermische Eigenschaften / Thermal properties  
Kühlfläche / cooling surface  
beidseitig / two-sided, θ = 180°sin  
beidseitig / two-sided, DC  
Anode / anode, θ = 180°sin  
Anode / anode, DC  
RthJC  
Innerer Wärmewiderstand  
max. 0,0128 °C/W  
max. 0,0120 °C/W  
max. 0,0208 °C/W  
max. 0,0200 °C/W  
max. 0,0308 °C/W  
max. 0,0300 °C/W  
thermal resistance, junction to case  
Kathode / cathode, θ = 180°sin  
Kathode / cathode, DC  
Kühlfläche / cooling surface  
beidseitig / two-sided  
Übergangs-Wärmewiderstand  
thermal resistance, case to heatsink  
RthCH  
0,003  
0,006  
max.  
max.  
°C/W  
°C/W  
einseitig / single-sided  
180  
Höchstzulässige Sperrschichttemperatur  
maximum junction temperature  
Betriebstemperatur  
Tvj max  
Tc op  
°C  
-40...+150 °C  
-40...+150 °C  
operating temperature  
Tstg  
Lagertemperatur  
storage temperature  
H.Sandmann  
date of publication: 2007-10-22  
prepared by:  
revision:  
1
approved by: J.Przybilla  
Seite/page  
1/8  
MA2-BE / 17 Jan 1995 , R.Jörke  
A 01/95  

与D4457N相关器件

型号 品牌 获取价格 描述 数据表
D448N ETC

获取价格

SCR / Diode Presspacks
D449-R1AA-G2 CHERRY

获取价格

Miniature Snap Switch Single Pole
D449-R1LD-G2 CHERRY

获取价格

Miniature Snap Switch Single Pole
D449-R1LL-G2 CHERRY

获取价格

Miniature Snap Switch Single Pole
D449-R1MD-G2 CHERRY

获取价格

Miniature Snap Switch Single Pole
D449-R1ML-G2 CHERRY

获取价格

Miniature Snap Switch Single Pole
D449-R1RA-G2 CHERRY

获取价格

Miniature Snap Switch Single Pole
D449-R1RD-G2 CHERRY

获取价格

Miniature Snap Switch Single Pole
D44C SAVANTIC

获取价格

Silicon NPN Power Transistors
D44C BOCA

获取价格

COMPLEMENTARY SILICON POWER TRANSISTORS