5秒后页面跳转
D2225UK PDF预览

D2225UK

更新时间: 2023-12-06 20:08:14
品牌 Logo 应用领域
TTELEC /
页数 文件大小 规格书
2页 22K
描述
Gold metallised multi-purpose silicon DMOS RF FET

D2225UK 数据手册

 浏览型号D2225UK的Datasheet PDF文件第2页 
TetraFET  
D2225UK  
ROHS COMPLIANT METAL GATE RF SILICON FET  
MECHANICAL DATA  
GOLD METALLISED  
A
N
MULTI-PURPOSE SILICON  
DMOS RF FET  
8
1
2
3
4
D
7
6
5
C
B
P
5W – 12.5V – 1GHz  
PUSH–PULL  
H
K
FEATURES  
M
L
• SIMPLIFIED AMPLIFIER DESIGN  
• SUITABLE FOR BROAD BAND APPLICATIONS  
J
E
F
G
SO8 PACKAGE  
• VERY LOW C  
PIN 1 – SOURCE  
PIN 2 – DRAIN 1  
PIN 3 – DRAIN 2  
PIN 4 – SOURCE  
PIN 5 – SOURCE  
PIN 6 – GATE 2  
PIN 7 – GATE 1  
PIN 8 – SOURCE  
rss  
• SIMPLE BIAS CIRCUITS  
• LOW NOISE  
Dim.  
A
B
C
D
E
F
G
mm  
4.06  
5.08  
1.27  
0.51  
3.56  
4.06  
1.65  
Tol.  
Inches  
0.160  
0.200  
0.050  
0.020  
0.140  
0.160  
0.065  
Tol.  
±0.08  
±0.08  
±0.08  
±0.08  
±0.08  
±0.08  
±0.08  
+0.25  
-0.00  
Min.  
Max.  
Max.  
Min.  
Max.  
±0.08  
Max.  
±0.08  
±0.003  
±0.003  
±0.003  
±0.003  
±0.003  
±0.003  
±0.003  
+0.010  
-0.000  
Min.  
• HIGH GAIN – 10 dB MINIMUM  
APPLICATIONS  
HF/VHF/UHF COMMUNICATIONS  
from 1MHz to 1GHz  
H
0.76  
0.030  
0.51  
1.02  
45°  
0°  
0.020  
0.040  
45°  
J
K
L
Max.  
Max.  
0°  
Min.  
7°  
7°  
Max.  
M
N
P
0.20  
2.18  
4.57  
0.008  
0.086  
0.180  
±0.003  
Max.  
±0.003  
ABSOLUTE MAXIMUM RATINGS (T  
= 25°C unless otherwise stated)  
17.5W  
case  
P
Power Dissipation  
D
BV  
BV  
Drain – Source Breakdown Voltage  
Gate – Source Breakdown Voltage  
Drain Current  
40V  
±20V  
DSS  
GSS  
I
4A  
D(sat)  
T
T
Storage Temperature  
–65 to 150°C  
200°C  
stg  
Maximum Operating Junction Temperature  
j
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.  
E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk  
Prelim. 2/99  

与D2225UK相关器件

型号 品牌 描述 获取价格 数据表
D2228N INFINEON Netz-Gleichrichterdiode Rectifier Diode

获取价格

D2228N02T INFINEON Rectifier Diode, 1 Phase, 1 Element, 2550A, 200V V(RRM), Silicon,

获取价格

D2228N04T INFINEON Rectifier Diode, 1 Phase, 1 Element, 2548A, 400V V(RRM), Silicon,

获取价格

D2228N06T INFINEON Rectifier Diode, 1 Phase, 1 Element, 2548A, 600V V(RRM), Silicon,

获取价格

D2228N08T INFINEON Rectifier Diode, 1 Phase, 1 Element, 2550A, 800V V(RRM), Silicon,

获取价格

D2229UK SEME-LAB METAL GATE RF SILICON FET

获取价格