TetraFET
D2225UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
GOLD METALLISED
A
N
MULTI-PURPOSE SILICON
DMOS RF FET
8
1
2
3
4
D
7
6
5
C
B
P
5W – 12.5V – 1GHz
PUSH–PULL
H
K
FEATURES
M
L
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
J
E
F
G
SO8 PACKAGE
• VERY LOW C
PIN 1 – SOURCE
PIN 2 – DRAIN 1
PIN 3 – DRAIN 2
PIN 4 – SOURCE
PIN 5 – SOURCE
PIN 6 – GATE 2
PIN 7 – GATE 1
PIN 8 – SOURCE
rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
Dim.
A
B
C
D
E
F
G
mm
4.06
5.08
1.27
0.51
3.56
4.06
1.65
Tol.
Inches
0.160
0.200
0.050
0.020
0.140
0.160
0.065
Tol.
±0.08
±0.08
±0.08
±0.08
±0.08
±0.08
±0.08
+0.25
-0.00
Min.
Max.
Max.
Min.
Max.
±0.08
Max.
±0.08
±0.003
±0.003
±0.003
±0.003
±0.003
±0.003
±0.003
+0.010
-0.000
Min.
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1MHz to 1GHz
H
0.76
0.030
0.51
1.02
45°
0°
0.020
0.040
45°
J
K
L
Max.
Max.
0°
Min.
7°
7°
Max.
M
N
P
0.20
2.18
4.57
0.008
0.086
0.180
±0.003
Max.
±0.003
ABSOLUTE MAXIMUM RATINGS (T
= 25°C unless otherwise stated)
17.5W
case
P
Power Dissipation
D
BV
BV
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
40V
±20V
DSS
GSS
I
4A
D(sat)
T
T
Storage Temperature
–65 to 150°C
200°C
stg
Maximum Operating Junction Temperature
j
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk
Prelim. 2/99