Datasheet > D2201

D2201

更新时间： 2024-11-29 22:29:03

品牌	Logo	应用领域
SEME-LAB		射频
页数	文件大小	规格书
2页	18K
描述
METAL GATE RF SILICON FET

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中文翻译

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数据手册

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D2201 数据手册

TetraFET

D2201UK

METAL GATE RF SILICON FET

MECHANICAL DATA

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

(typ)

2.5W – 12.5V – 1GHz

SINGLE ENDED

(2 pls)

FEATURES

• SIMPLIFIED AMPLIFIER DESIGN

• SUITABLE FOR BROAD BAND APPLICATIONS

• LOW C

rss

PIN 1

PIN 3

SOURCE

GATE

PIN 2

DRAIN

• SIMPLE BIAS CIRCUITS

• LOW NOISE

DIM

16.51

6.35

45°

3.30

18.92

1.52

2.16

14.22

1.52

6.35

0.13

5.08

Tol.

0.25

0.13

5°

0.13

0.08

0.13

0.08

0.13

0.03

0.51

Inches

Tol.

0.650

0.250

45°

0.010

0.005

5°

• HIGH GAIN – 10 dB MINIMUM

0.130

0.745

0.060

0.085

0.560

0.060

0.250

0.005

0.200

0.005

0.003

0.005

0.003

0.005

0.001

0.020

APPLICATIONS

• VHF/UHF COMMUNICATIONS

from 1 MHz to 2 GHz

1.27 x 45° 0.13 0.050 x 45° 0.005

ABSOLUTE MAXIMUM RATINGS (T

= 25°C unless otherwise stated)

case

Power Dissipation

17.5W

40V

Drain – Source Breakdown Voltage

Gate – Source Breakdown Voltage

Drain Current

DSS

GSS

±20V

D(sat)

Storage Temperature

–65 to 150°C

200°C

stg

Maximum Operating Junction Temperature

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

Prelim. 12/00

中文翻译

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