TetraFET
D2003UK
ROHS COMPLIANT
METAL GATE RF SILICON FET
MECHANICAL DATA
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
B
H
C
G
2
3
4
1
5W – 28V – 1GHz
PUSH–PULL
A
D
E
5
F
I
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
N
M
O
J
K
DQ
• VERY LOW C
PIN 1
PIN 3
PIN 5
SOURCE (COMMON) PIN 2
DRAIN 1
GATE 2
rss
DRAIN 2
GATE 1
PIN 4
• SIMPLE BIAS CIRCUITS
• LOW NOISE
DIM
A
B
C
D
E
mm
16.38
1.52
45°
6.35
3.30
14.22
Tol.
Inches
Tol.
0.010
0.005
5°
0.005
0.005
0.005
• HIGH GAIN – 13 dB MINIMUM
0.26
0.13
5°
0.13
0.13
0.13
0.645
0.060
45°
0.250
0.130
0.560
APPLICATIONS
F
G
H
I
J
K
M
N
O
1.27 x 45° 0.13 0.05 x 45° 0.005
• VHF/UHF COMMUNICATIONS
from 50 MHz to 1 GHz
1.52
6.35
0.13
2.16
1.52
5.08
18.90
0.13
0.13
0.02
0.13
0.13
MAX
0.13
0.060
0.250
0.005
0.085
0.060
0.200
0.744
0.005
0.005
0.001
0.005
0.005
MAX
0.005
ABSOLUTE MAXIMUM RATINGS (T
= 25°C unless otherwise stated)
35W
case
P
Power Dissipation
D
BV
BV
Drain – Source Breakdown Voltage *
Gate – Source Breakdown Voltage *
Drain Current *
65V
±20V
DSS
GSS
I
1A
D(sat)
T
T
Storage Temperature
–65 to 150°C
200°C
stg
Maximum Operating Junction Temperature
j
* Per Side
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 3416
Issue 2