Datasheet > D2009UK

D2009UK

更新时间： 2023-12-06 20:02:53

品牌	Logo	应用领域
TTELEC		/
页数	文件大小	规格书
2页	25K
描述
Gold metallised multi-purpose silicon DMOS RF FET

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中文翻译

获取价格

数据手册

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D2009UK 数据手册

TetraFET

D2009UK

ROHS COMPLIANT

METAL GATE RF SILICON FET

MECHANICAL DATA

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

10W – 28V – 1GHz

PUSH–PULL

FEATURES

• SIMPLIFIED AMPLIFIER DESIGN

• SUITABLE FOR BROAD BAND APPLICATIONS

• VERY LOW C

PIN 1

PIN 3

PIN 5

SOURCE (COMMON) PIN 2

DRAIN 1

GATE 2

rss

DRAIN 2

GATE 1

PIN 4

• SIMPLE BIAS CIRCUITS

• LOW NOISE

DIM

16.38

1.52

45°

6.35

3.30

14.22

Tol.

Inches

Tol.

0.010

0.005

5°

0.005

• HIGH GAIN – 10 dB MINIMUM

0.26

0.13

5°

0.13

0.645

0.060

45°

0.250

0.130

0.560

APPLICATIONS

1.27 x 45° 0.13 0.05 x 45° 0.005

• VHF/UHF COMMUNICATIONS

from 50 MHz to 1 GHz

1.52

6.35

0.13

2.16

1.52

5.08

18.90

0.13

0.02

0.13

MAX

0.13

0.060

0.250

0.005

0.085

0.060

0.200

0.744

0.005

0.001

0.005

MAX

0.005

ABSOLUTE MAXIMUM RATINGS (T

= 25°C unless otherwise stated)

58W

case

Power Dissipation

Drain – Source Breakdown Voltage *

Gate – Source Breakdown Voltage *

Drain Current *

65V

±20V

DSS

GSS

D(sat)

Storage Temperature

–65 to 150°C

200°C

stg

Maximum Operating Junction Temperature

* Per Side

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

Document Number 5535

Issue 1

中文翻译

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