Datasheet > D1022

D1022

更新时间： 2024-11-14 22:29:03

品牌	Logo	应用领域
SEME-LAB		射频
页数	文件大小	规格书
4页	57K
描述
METAL GATE RF SILICON FET

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中文翻译

获取价格

数据手册

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D1022 数据手册

TetraFET

D1022UK

METAL GATE RF SILICON FET

MECHANICAL DATA

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

(

2 pls

)

100W – 28V – 500MHz

PUSH–PULL

4 pls

( )

FEATURES

• SIMPLIFIED AMPLIFIER DESIGN

• SUITABLE FOR BROAD BAND APPLICATIONS

• LOW C

PIN 1

PIN 3

PIN 5

SOURCE (COMMON) PIN 2

DRAIN 1

GATE 2

rss

DRAIN 2

GATE 1

PIN 4

• SIMPLE BIAS CIRCUITS

• LOW NOISE

DIM

6.45

1.65R

45°

16.51

6.47

18.41

1.52

4.82

24.76

1.52

0.81R

0.13

2.16

Tol.

Inches

Tol.

0.005

5°

• HIGH GAIN – 10 dB MINIMUM

0.13

5°

0.76

0.13

0.254

0.65R

45°

0.650

0.255

0.725

0.060

0.190

0.975

0.060

0.032R

0.005

0.085

0.03

0.005

APPLICATIONS

• HF/VHF/UHF COMMUNICATIONS

from 1 MHz to 500 MHz

0.13

0.02

0.13

0.005

0.001

0.005

ABSOLUTE MAXIMUM RATINGS (T

= 25°C unless otherwise stated)

292W

case

Power Dissipation

Drain – Source Breakdown Voltage

Gate – Source Breakdown Voltage

Drain Current

70V

±20V

DSS

GSS

15A

D(sat)

Storage Temperature

–65 to 150°C

200°C

stg

Maximum Operating Junction Temperature

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

Prelim.11/00

12 3 4

中文翻译

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