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CZRT5239B-G PDF预览

CZRT5239B-G

更新时间: 2024-11-27 06:51:55
品牌 Logo 应用领域
上华 - COMCHIP 稳压二极管
页数 文件大小 规格书
5页 81K
描述
SMD Zener Diode

CZRT5239B-G 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.35配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
最大动态阻抗:10 ΩJESD-30 代码:R-PDSO-G3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
最低工作温度:-65 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:0.3 W标称参考电压:9.1 V
子类别:Voltage Reference Diodes表面贴装:YES
技术:ZENER端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED最大电压容差:5%
工作测试电流:20 mABase Number Matches:1

CZRT5239B-G 数据手册

 浏览型号CZRT5239B-G的Datasheet PDF文件第2页浏览型号CZRT5239B-G的Datasheet PDF文件第3页浏览型号CZRT5239B-G的Datasheet PDF文件第4页浏览型号CZRT5239B-G的Datasheet PDF文件第5页 
COMCHIP  
SMD Zener Diode  
SMD Diodes Specialist  
CZRT5221B-GThru CZRT5267B-G  
Voltage: 2.4 to 39 Volts  
Power: 350 mWatts  
RoHS Device  
Features  
SOT-23  
Planar die construction  
0.119(3.00)  
0.110(2.80)  
350mW power dissipation on FR-4 PCB  
3
Ideally suited for automated assembly  
process  
0.056(1.40)  
0.047(1.20)  
General purpose, medium current  
1
2
0.079(2.00)  
0.071(1.80)  
Mechanical data  
Case: SOT-23, Molded plastic  
0.006(0.15)  
0.002(0.05)  
0.041(1.05)  
0.035(0.90)  
Terminals: Solderable per MIL-STD-  
202G,method 208  
0.100(2.55)  
0.089(2.25)  
Polarity: See diagram below  
0.004(0.10) max  
0.008(0.20) min  
Mounting position: Any  
0.020(0.50)  
0.012(0.30)  
Marking: see table on page2  
Weight: 0.0078 gram(approx.).  
Dimensions in inches and (millimeter)  
Single  
Electrical Characteristics (TA=25°C, unless otherwise specified)  
Parameter  
Forward voltage drop at IF=10mA  
Symbol  
Value  
0.9  
Unit  
V
VF  
Power dissipation (Notes A),TA = 25°C  
PD  
350  
mW  
Thermal resistance, junction to ambient air (Notes A)  
Operating junction and storage temperature range  
RθJA  
357  
oC/W  
O
TJ  
-65 to +150  
C
Notes:  
A. Valid provided that device terminals are kept at ambient temperature.  
B. Tested with pulses, Tp1.0mS.  
REV:C  
Page 1  
QW-BZ013  
Comchip Technology CO., LTD.  

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