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CZRM27B8V2P PDF预览

CZRM27B8V2P

更新时间: 2024-02-12 21:39:07
品牌 Logo 应用领域
上华 - COMCHIP 测试二极管
页数 文件大小 规格书
3页 89K
描述
Zener Diode, 8.2V V(Z), 2%, 0.8W,

CZRM27B8V2P 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.92
配置:SINGLE二极管类型:ZENER DIODE
最大动态阻抗:2 Ω元件数量:1
最高工作温度:150 °C最大功率耗散:0.8 W
标称参考电压:8.2 V子类别:Voltage Reference Diodes
表面贴装:YES最大电压容差:2%
工作测试电流:100 mABase Number Matches:1

CZRM27B8V2P 数据手册

 浏览型号CZRM27B8V2P的Datasheet PDF文件第2页浏览型号CZRM27B8V2P的Datasheet PDF文件第3页 
COMCHIP  
Surface Mount Zener Diode  
www.comchiptech.com  
CZRM27C3V6P THRU C200P  
Features  
Power Dissipation 0.8Watts  
‘ Low profile surface-mount package  
MINI-SMA  
‘ Zener and surge current specification  
‘ Low leakage current  
‘ Excellent stability  
(
0.161 4.1)  
(
0.146 3.7)  
(
0.012 0.3)Typ.  
(
0.071 1.8)  
(
)
0.055 1.4  
Mechanical Data  
‘ Case: Molded plastic MINI-SMA  
(2.8  
(2.4  
0.110  
0.094  
)
)
‘ Epoxy: UL 94V-0 rate flame retardant  
‘ Solderable per MIL-STD-202,  
method 208 guaranteed  
(
0.063 1.6)  
(
)
0.055 1.4  
‘ Polarity: cathode band  
(
0.035 0.9)Typ.  
(
0.035 0.9)Typ.  
‘ Mounting position: Any  
‘ Weight: 0.04gram(approx.)  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
o
Rating at 25  
C ambient temperature unless otherwise specified.  
Parameter  
VALUE  
Units  
V
Forward voltage  
IF=0.2A  
1.2  
Power Dissipation  
TA=25oC  
TL=80oC  
( Note )  
0.8  
2.3  
W
W
Non-repetitive peak pulse  
power dissipation  
TJ=25oC  
100us square pulse  
300  
150  
100  
Non-repetitive peak pulse  
power dissipation  
TJ=25oC  
10/1000us waveform  
W
W
(CZRM27C7V5P to C100P)  
Non-repetitive peak pulse  
TJ=25oC  
power dissipation 10/1000us waveform  
(CZRM27C110P to C200P)  
Thermal resistance junction to lead  
ambient ( Note )  
30  
KW  
oC  
180  
Operating junction and Storage Temperature  
Range  
150 / -55 to +150  
NOTES : Mounted on epoxy-glass PCB with 3 x 3 mm Cu pads ( 40um thick)  
MDS0310010B  
Page 1  

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