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CYK128K16SCCBU-55BVI PDF预览

CYK128K16SCCBU-55BVI

更新时间: 2024-02-28 05:38:21
品牌 Logo 应用领域
赛普拉斯 - CYPRESS /
页数 文件大小 规格书
10页 182K
描述
2-Mbit (128K x 16) Pseudo Static RAM

CYK128K16SCCBU-55BVI 数据手册

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CYK128K16SCCB  
Switching Waveforms (continued)  
Write Cycle No. 1(WE Controlled)[13, 14, 17, 18, 19]  
t
WC  
ADDRESS  
t
SCE  
CE  
1
CE2  
t
t
HA  
AW  
t
t
PWE  
SA  
WE  
t
BW  
/
BHE BLE  
OE  
tHD  
t
SD  
t
HD  
VALIDDATA  
DATAI /O  
DONT CARE  
t
HZOE  
Write Cycle 2 (CE1 or CE2 Controlled)[13, 14, 17, 18, 19]  
tWC  
ADDRESS  
CE1  
tSCE  
CE  
2
tSA  
tAW  
tHA  
tPWE  
WE  
tBW  
BHE/BLE  
OE  
tHD  
tSD  
VALID DATA  
DATA I/O  
DON’T CARE  
tHZOE  
Notes:  
17. Data I/O is high impedance if OE > V  
.
IH  
18. If Chip Enable goes INACTIVE simultaneously with WE = HIGH, the output remains in a high-impedance state.  
19. During the DON’T CARE period in the DATA I/O waveform, the I/Os are in output state and input signals should not be applied.  
Document #: 38-05525 Rev. *F  
Page 6 of 10  

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