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CY93C16-SXIT PDF预览

CY93C16-SXIT

更新时间: 2024-02-19 07:03:22
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
16页 646K
描述
EEPROM, 16KX8, Serial, CMOS, PDSO8, LEAD FREE, SOIC-8

CY93C16-SXIT 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP,针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.84
Is Samacsys:N备用内存宽度:16
最大时钟频率 (fCLK):4 MHzJESD-30 代码:R-PDSO-G8
JESD-609代码:e4长度:4.889 mm
内存密度:131072 bit内存集成电路类型:EEPROM
内存宽度:8湿度敏感等级:3
功能数量:1端子数量:8
字数:16384 words字数代码:16000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:16KX8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL峰值回流温度(摄氏度):260
认证状态:Not Qualified座面最大高度:1.727 mm
串行总线类型:MICROWIRE最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.65 V标称供电电压 (Vsup):2.7 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:NICKEL PALLADIUM GOLD
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:20
宽度:3.8989 mm最长写入周期时间 (tWC):5 ms
Base Number Matches:1

CY93C16-SXIT 数据手册

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CY93C01/02/04/08/16  
1 Kbit, 2 Kbit, 4 Kbit, 8 Kbit, and 16 Kbit  
(x8 or x16) MicroWire Serial EEPROM  
Features  
Functional Description  
Continuous voltage operation  
VCC = 1.65V to 5.5V  
The CY93C01/02/04/08/16 provides 1K, 2K, 4K, 8K, and 16K  
bits of serial Electrically Erasable and Programmable Read Only  
Memory (EEPROM). The memory is organized as x16 when the  
ORG pin is connected to VCC and as x8 when it is tied to ground.  
The device is optimized for use in many industrial applications,  
where low power and low voltage operations are essential. The  
CY93C01/02/04/08/16 is available in space saving 8-Pin SOIC,  
and 8-Pin TSSOP packages. The CY93C01/02/04/08/16 is  
Internally organized as x8 or x16  
Industry standard three wire serial interface  
Schmitt trigger, filtered inputs for noise suppression  
Programming instructions that work on byte, word, or entire  
enabled through the Chip Select pin (CS), and accessed through  
a three wire serial interface consisting of Data Input (DI), Data  
Output (DO), and Serial Clock (SK). On receiving a read  
instruction at DI, the address is decoded and the data is clocked  
out serially on the data output pin DO. The write cycle is  
completely self timed and no separate erase cycle is required  
before write. The write cycle is enabled only when the part is in  
the erase or write enable state. When CS is brought high  
following the initiation of a write cycle, the DO pin outputs the  
Ready/Busy status of the part. The CY93C01/02/04/08/16 is  
available in a 1.65V to 5.5V version.  
memory  
Sequential read operation  
4 MHz clock rate (5V) compatibility  
Self timed write cycle (5 ms max)  
Ready/Busy signal during programming  
Industrial temperature range  
High reliability  
Endurance: 1 million write cycles  
Data retention: 100 years  
RoHS compliant 8-Pin SOIC and 8-Pin TSSOP packages  
Pb-free and RoHS compliant  
Logic Block Diagram  
VCC  
CS  
DO  
ORG  
CY93CXX  
DI  
SK  
VSS  
Cypress Semiconductor Corporation  
Document #: 001-15635 Rev. *C  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised February 05, 2009  
[+] Feedback  

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