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CY7C441-14JIT PDF预览

CY7C441-14JIT

更新时间: 2024-11-20 13:07:15
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 先进先出芯片
页数 文件大小 规格书
15页 220K
描述
FIFO, 512X9, 10ns, Synchronous, CMOS, PQCC32, PLASTIC, LCC-32

CY7C441-14JIT 技术参数

生命周期:Obsolete零件包装代码:QFJ
包装说明:QCCJ,针数:32
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.71风险等级:5.8
最长访问时间:10 ns其他特性:PARITY GENERATOR/CHECKER
周期时间:14 nsJESD-30 代码:R-PQCC-J32
长度:13.97 mm内存密度:4608 bit
内存宽度:9功能数量:1
端子数量:32字数:512 words
字数代码:512工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:512X9输出特性:TOTEM POLE
可输出:NO封装主体材料:PLASTIC/EPOXY
封装代码:QCCJ封装形状:RECTANGULAR
封装形式:CHIP CARRIER并行/串行:PARALLEL
认证状态:Not Qualified座面最大高度:3.55 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:J BEND端子节距:1.27 mm
端子位置:QUAD宽度:11.43 mm
Base Number Matches:1

CY7C441-14JIT 数据手册

 浏览型号CY7C441-14JIT的Datasheet PDF文件第2页浏览型号CY7C441-14JIT的Datasheet PDF文件第3页浏览型号CY7C441-14JIT的Datasheet PDF文件第4页浏览型号CY7C441-14JIT的Datasheet PDF文件第5页浏览型号CY7C441-14JIT的Datasheet PDF文件第6页浏览型号CY7C441-14JIT的Datasheet PDF文件第7页 
43  
CY7C441  
CY7C443  
Clocked 512 x 9, 2K x 9 FIFOs  
lutions for a wide variety of data buffering needs, including  
high-speed data acquisition, multiprocessor interfaces, and  
communications buffering.  
Features  
• High-speed, low-power, first-in first-out (FIFO)  
memories  
Both FIFOs have 9-bit input and output ports that are con-  
trolled by separate clock and enable signals. The input port is  
controlled by a free-running clock (CKW) and a write enable  
pin (ENW). When ENW is asserted, data is written into the  
FIFO on the rising edge of the CKW signal. While ENW is held  
active, data is continually written into the FIFO on each CKW  
cycle. The output port is controlled in a similar manner by a  
free-running read clock (CKR) and a read enable pin (ENR).  
The read (CKR) and write (CKW) clocks may be tied together  
for single-clock operation or the two clocks may be run inde-  
pendently for asynchronous read/write applications. Clock fre-  
quencies up to 83.3 MHz are acceptable.  
• 512 x 9 (CY7C441)  
• 2,048 x 9 (CY7C443)  
• 0.65 micron CMOS for optimum speed/power  
• High-speed 83-MHz operation (12 ns read/write cycle  
time)  
• Low power — ICC=70 mA  
• Fully asynchronous and simultaneous read and write  
operation  
• Empty, Almost Empty, and Almost Full status flags  
• TTL compatible  
• Parity generation/checking  
The CY7C441 and CY7C443 clocked FIFOs provide two sta-  
tus flag pins (F1 and F2). These flags are decoded to deter-  
mine one of four states: Empty, Almost Empty, Intermediate,  
and Almost Full (Table 1). The flags are synchronous; i.e.,  
change state relative to either the read clock (CKR) or the write  
clock (CKW). The Empty and Almost Empty states are updat-  
ed exclusively by the CKR while Almost Full is updated exclu-  
sively by CKW. The synchronous flag architecture guarantees  
that the flags maintain their status for some minimum time.  
• Independent read and write enable pins  
• Supports free-running 50% duty cycle clock inputs  
• Center power and ground pins for reduced noise  
• Width Expansion Capability  
• Available in PLCC packages  
Functional Description  
The CY7C441 and CY7C443 are high-speed, low-power,  
first-in first-out (FIFO) memories with clocked read and write  
interfaces. Both FIFOs are 9 bits wide. The CY7C441 has a  
512 word by 9 bit memory array, while the CY7C443 has a  
2048 word by 9 bit memory array. These devices provide so-  
The CY7C441 and the CY7C443 use center power and  
ground for reduced noise. Both configurations are fabricated  
using an advanced.65µm CMOS technology. Input ESD pro-  
tection is greater than 2001V, and latch-up is prevented by  
reliable layout techniques and guard rings.  
Logic Block Diagram  
Pin Configuration  
CKW  
ENW  
D
08  
PLCC  
Top View  
INPUT  
REGISTER  
D
D
D
NCD  
D
D
6
1
2
3
4
5
4
3
2
32 31 30  
1
F
D
D
D
1
0
7
8
29  
FLAG  
LOGIC  
5
6
7
8
9
10  
11  
12  
13  
WRITE  
CONTROL  
LOGIC  
ENW  
CKW  
28  
27  
26  
25  
24  
23  
F
2
NC  
MR  
V
CC  
7C441  
7C443  
V
SS  
V
SS  
F1  
CKR  
ENR  
RAM  
ARRAY  
512x 9  
2048x 9  
WRITE  
POINTER  
READ  
POINTER  
F2  
NC  
Q
0
Q
22  
21  
8
7
Q
14 15 16 17 1819 20  
RESET  
LOGIC  
READ  
CONTROL  
LOGIC  
C441-2  
MR  
Q
Q Q NC Q  
Q Q  
5 6  
1
2
3
4
OUTPUT  
REGISTER  
CKR  
ENR  
C441-1  
Q
08  
Cypress Semiconductor Corporation  
3901 North First Street  
San Jose  
CA 95134  
408-943-2600  
Document #: 38-06032 Rev. *A  
Revised December 26, 2002  

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