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CY7C4261V-15JCR PDF预览

CY7C4261V-15JCR

更新时间: 2024-02-18 03:22:12
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 先进先出芯片
页数 文件大小 规格书
16页 455K
描述
FIFO, 16KX9, Synchronous, CMOS, PQCC32, PLASTIC, LCC-32

CY7C4261V-15JCR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:QFJ
包装说明:QCCJ, LDCC32,.5X.6针数:32
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.71Factory Lead Time:1 week
风险等级:8.52最长访问时间:10 ns
最大时钟频率 (fCLK):66.7 MHz周期时间:15 ns
JESD-30 代码:R-PQCC-J32JESD-609代码:e3
长度:13.97 mm内存密度:147456 bit
内存集成电路类型:OTHER FIFO内存宽度:9
湿度敏感等级:3功能数量:1
端子数量:32字数:16384 words
字数代码:16000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:16KX9输出特性:3-STATE
可输出:YES封装主体材料:PLASTIC/EPOXY
封装代码:QCCJ封装等效代码:LDCC32,.5X.6
封装形状:RECTANGULAR封装形式:CHIP CARRIER
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:3.3 V认证状态:Not Qualified
座面最大高度:3.556 mm最大待机电流:0.004 A
子类别:FIFOs最大压摆率:0.025 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Matte Tin (Sn)端子形式:J BEND
端子节距:1.27 mm端子位置:QUAD
处于峰值回流温度下的最长时间:20宽度:11.43 mm
Base Number Matches:1

CY7C4261V-15JCR 数据手册

 浏览型号CY7C4261V-15JCR的Datasheet PDF文件第1页浏览型号CY7C4261V-15JCR的Datasheet PDF文件第2页浏览型号CY7C4261V-15JCR的Datasheet PDF文件第4页浏览型号CY7C4261V-15JCR的Datasheet PDF文件第5页浏览型号CY7C4261V-15JCR的Datasheet PDF文件第6页浏览型号CY7C4261V-15JCR的Datasheet PDF文件第7页 
CY7C4261V/CY7C4271V  
CY7C4281V/CY7C4291V  
data in the output register will be available to the Q0-8 outputs  
after tOE. If devices are cascaded, the OE function will only  
output data on the FIFO that is read enabled.  
Functional Description (continued)  
The CY7C4261/71/81/91V provides four status pins: Empty,  
Full, Programmable Almost Empty, and Programmable  
Almost Full. The Almost Empty/Almost Full flags are program-  
mable to single word granularity. The programmable flags  
default to Empty + 7 and Full – 7.  
The FIFO contains overflow circuitry to disallow additional  
writes when the FIFO is full, and underflow circuitry to disallow  
additional reads when the FIFO is empty. An empty FIFO  
maintains the data of the last valid read on its Q0-8 outputs  
even after additional reads occur.  
The flags are synchronous, i.e., they change state relative to  
either the read clock (RCLK) or the write clock (WCLK). When  
entering or exiting the Empty and Almost Empty states, the  
flags are updated exclusively by the RCLK. The flags denoting  
Almost Full, and Full states are updated exclusively by WCLK.  
The synchronous flag architecture guarantees that the flags  
maintain their status for at least one cycle  
Write Enable 1 (WEN1). If the FIFO is configured for program-  
mable flags, Write Enable 1 (WEN1) is the only write enable  
control pin. In this configuration, when Write Enable 1 (WEN1)  
is LOW, data can be loaded into the input register and RAM  
array on the LOW-to-HIGH transition of every write clock  
(WCLK). Data is stored is the RAM array sequentially and  
independently of any on-going read operation.  
All configurations are fabricated using an advanced 0.35µ  
CMOS technology. Input ESD protection is greater than  
2001V, and latch-up is prevented by the use of guard rings.  
Write Enable 2/Load (WEN2/LD). This is a dual-purpose pin.  
The FIFO is configured at Reset to have programmable flags  
or to have two write enables, which allows for depth  
expansion. If Write Enable 2/Load (WEN2/LD) is set active  
HIGH at Reset (RS = LOW), this pin operates as a second  
write enable pin.  
Architecture  
The CY7C4261/71/81/91V consists of an array of 16K, 32K,  
64K, or 128K words of nine bits each (implemented by a  
dual-port array of SRAM cells), a read pointer, a write pointer,  
control signals (RCLK, WCLK, REN1, REN2, WEN1, WEN2,  
RS), and flags (EF, PAE, PAF, FF).  
If the FIFO is configured to have two write enables, when Write  
Enable (WEN1) is LOW and Write Enable 2/Load (WEN2/LD)  
is HIGH, data can be loaded into the input register and RAM  
array on the LOW-to-HIGH transition of every write clock  
(WCLK). Data is stored in the RAM array sequentially and  
independently of any on-going read operation.  
Resetting the FIFO  
Upon power-up, the FIFO must be reset with a Reset (RS)  
cycle. This causes the FIFO to enter the Empty condition  
signified by EF being LOW. All data outputs (Q0–8) go LOW  
tRSF after the rising edge of RS. In order for the FIFO to reset  
to its default state, the user must not read or write while RS is  
LOW. All flags are guaranteed to be valid tRSF after RS is taken  
LOW.  
Programming  
When WEN2/LD is held LOW during Reset, this pin is the load  
(LD) enable for flag offset programming. In this configuration,  
WEN2/LD can be used to access the four 9-bit offset registers  
contained in the CY7C4261/71/81/91V for writing or reading  
data to these registers.  
FIFO Operation  
When the device is configured for programmable flags and  
both WEN2/LD and WEN1 are LOW, the first LOW-to-HIGH  
transition of WCLK writes data from the data inputs to the  
empty offset least significant bit (LSB) register. The second,  
third, and fourth LOW-to-HIGH transitions of WCLK store data  
in the empty offset most significant bit (MSB) register, full  
offset LSB register, and full offset MSB register, respectively,  
when WEN2/LD and WEN1 are LOW. The fifth LOW-to-HIGH  
transition of WCLK while WEN2/LD and WEN1 are LOW  
writes data to the empty LSB register again. Figure 1 shows  
the registers sizes and default values for the various device  
types.  
When the WEN1 signal is active LOW, WEN2 is active HIGH,  
and FF is active HIGH, data present on the D0–8 pins is written  
into the FIFO on each rising edge of the WCLK signal.  
Similarly, when the REN1 and REN2 signals are active LOW  
and EF is active HIGH, data in the FIFO memory will be  
presented on the Q0-8 outputs. New data will be presented on  
each rising edge of RCLK while REN1 and REN2 are active.  
REN1 and REN2 must set up tENS before RCLK for it to be a  
valid read function. WEN1 and WEN2 must occur tENS before  
WCLK for it to be a valid write function.  
An output enable (OE) pin is provided to three-state the Q0–8  
outputs when OE is asserted. When OE is enabled (LOW),  
Document #: 38-06013 Rev. *B  
Page 3 of 16  

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