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CY7C263-55WC PDF预览

CY7C263-55WC

更新时间: 2024-02-09 03:43:13
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 开关电源开关可编程只读存储器
页数 文件大小 规格书
16页 481K
描述
8K x 8 Power-Switched and Reprogrammable PROM

CY7C263-55WC 数据手册

 浏览型号CY7C263-55WC的Datasheet PDF文件第2页浏览型号CY7C263-55WC的Datasheet PDF文件第3页浏览型号CY7C263-55WC的Datasheet PDF文件第4页浏览型号CY7C263-55WC的Datasheet PDF文件第5页浏览型号CY7C263-55WC的Datasheet PDF文件第6页浏览型号CY7C263-55WC的Datasheet PDF文件第7页 
CY7C261  
CY7C263/CY7C264  
8Kx8Power-SwitchedandReprogrammablePROM  
Features  
Functional Description  
• CMOS for optimum speed/power  
• Windowed for reprogrammability  
• High speed  
The CY7C261, CY7C263, and CY7C264 are high-perfor-  
mance 8192-word by 8-bit CMOS PROMs. When deselected,  
the 7C261 automatically powers down into a low-power stand-  
by mode. It is packaged in a 300-mil-wide package. The 7C263  
and 7C264 are packaged in 300-mil-wide and 600-mil-wide  
packages respectively, and do not power down when deselect-  
ed. The reprogrammable packages are equipped with an era-  
sure window; when exposed to UV light, these PROMs are  
erased and can then be reprogrammed. The memory cells uti-  
lize proven EPROM floating-gate technology and byte-wide in-  
telligent programming algorithms.  
— 20 ns (commercial)  
— 25 ns (military)  
• Low power  
— 660 mW (commercial)  
— 770 mW (military)  
• Super low standby power (7C261)  
— Less than 220 mW when deselected  
The CY7C261, CY7C263, and CY7C264 are plug-in replace-  
ments for bipolar devices and offer the advantages of lower  
power, superior performance and programming yield. The  
EPROM cell requires only 12.5V for the supervoltage and low  
current requirements allow for gang programming. The  
EPROM cells allow for each memory location to be tested  
100%, as each location is written into, erased, and repeatedly  
exercised prior to encapsulation. Each PROM is also tested for  
AC performance to guarantee that after customer program-  
ming the product will meet DC and AC specification limits.  
— Fast access: 20 ns  
• EPROM technology 100% programmable  
• Slim 300-mil or standard 600-mil packaging available  
5V ± 10% VCC, commercial and military  
Capable of withstanding greater than 2001V static dis-  
charge  
TTL-compatible I/O  
Direct replacement for bipolar PROMs  
Read is accomplished by placing an active LOW signal on CS.  
The contents of the memory location addressed by the ad-  
dress line (A0A12) will become available on the output lines  
(O0O7).  
Logic Block Diagram  
Pin Configurations  
A
0
O
O
7
A
1
DIP/Flatpack  
Top View  
A
COLUMN  
MULTI–  
PLEXER  
2
PROGRAM–  
MABLE  
ARRAY  
LCC/PLCC (OpaqueOnly)  
Top View  
ROW  
ADDRESS  
6
A
3
V
A
1
24  
23  
22  
CC  
7
A
4
A
8
A
6
2
3
4
A
A
5
O
O
O
A
9
5
4
3
5
3
2 1 2827  
4
26  
25  
A
10  
21  
20  
19  
18  
17  
A
A
6
4
A
10  
A
5
6
7
8
9
4
CS  
5
6
A
3
ADDRESS  
DECODER  
CS  
24  
23  
22  
21  
20  
19  
A
7
A
3
2
A
11  
A
A
11  
2
A
7C261  
7C263  
A
12  
A
8
A
12  
A
7
8
9
A
1
1
7C261  
7C263  
7C264  
O
7
A
A
0
NC  
0
A
9
NC  
O
O
7
O
6
O
O
10  
11  
0
16  
15  
14  
13  
O
6
0
A
O
5
10  
11  
12  
10  
11  
12  
1
1314151617 18  
12  
COLUMN  
ADDRESS  
O
4
O
2
O
1
O
2
A
A
O
3
GND  
POWER DOWN  
(7C261)  
O
0
CS  
For an 8K x 8 Registered PROM, see theCY7C265.  
Cypress Semiconductor Corporation  
Document #: 38-04010 Rev. **  
3901 North First Street  
San Jose  
CA 95134  
408-943-2600  
Revised March 4, 2002  

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