Datasheet > 存储 > OTP ROM> CY7C263-55WC

CY7C263-55WC

更新时间： 2024-02-19 01:02:29

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		开关电源开关可编程只读存储器
页数	文件大小	规格书
16页	481K
描述
8K x 8 Power-Switched and Reprogrammable PROM

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数据手册

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CY7C263-55WC 数据手册

CY7C261

CY7C263/CY7C264

Switching Waveforms^[4]

SUPPLY

CURRENT

50%

A -

ADDRESS

ACS

HZCS

O -

Erasure Characteristics

Operating Modes

Wavelengths of light less than 4000 angstroms begin to erase

the devices in the windowed package. For this reason, an

opaque label should be placed over the window if the PROM

is exposed to sunlight or fluorescent lighting for extended pe-

riods of time.

Read

Read is the normal operating mode for programmed device. In

this mode, all signals are normal TTL levels. The PROM is

addressed with a 13-bit field, a chip select, (active LOW), is

applied to the CS pin, and the contents of the addressed location

appear on the data out pins.

The recommended dose of ultraviolet light for erasure is a

wavelength of 2537 angstroms for a minimum dose (UV inten-

sity multiplied by exposure time) of 25 Wsec/cm². For an ultra-

violet lamp with a 12 mW/cm²power rating, the exposure time would

be approximately 35 minutes. The 7C261 or 7C263 needs to

be within 1 inch of the lamp during erasure. Permanent dam-

age may result if the PROM is exposed to high-intensity UV

light for an extended period of time. 7258 Wsec/cm²is the

recommended maximum dosage.

Program, Program Inhibit, Program Verify

These modes are entered by placing a high voltage V_PPon pin

19, with pins 18 and 20 set to V_ILP. In this state, pin 21 becomes a

latch signal, allowing the upper 5 address bits to be latched into an

onboard register, pin 22 becomes an active LOW program (PGM)

signal and pin 23 becomes an active LOW verify (VFY) signal. Pins

22 and 23 should never be active LOW at the same time. The PRO-

GRAM mode exists when PGM is LOW, and VFY is HIGH. The verify

mode exists when the reverse is true, PGM HIGH and VFY LOW and

the program inhibit mode is entered with both PGM and VFY HIGH.

Program inhibit is specifically provided to allow data to be placed on

and removed from the data pins without conflict

Table 1. Mode Selection

Pin Function^{[6, 7]}

Read or Output Disable

Program

A₁₂

A₁₁

V_PP

A₁₁

A₁₀

LATCH

A₁₀

A₉

PGM

A₉

A₈

VFY

A₈

O₇–O₀

D₇–D₀

O₇–O₀

High Z

D₇–D₀

High Z

O₇–O₀

Mode

Read

A₁₂

V_ILP

V_IL

Output Disable

Program

A₁₁

A₁₀

A₉

A₈

V_IH

V_PP

V_ILP

V_IHP

V_ILP

Program Inhibit

Program Verify

Blank Check

V_ILP

Notes:

6. X = “don’t care” but not to exceed V_CC±5%.

7. Addresses A₈-A₁₂must be latched through lines A₀-A₄in programming modes.

Document #: 38-04010 Rev. **

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