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CY7C243-55WMB PDF预览

CY7C243-55WMB

更新时间: 2024-02-14 05:38:43
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 可编程只读存储器电动程控只读存储器内存集成电路
页数 文件大小 规格书
11页 289K
描述
UVPROM, 4KX8, 55ns, CMOS, CDIP24, 0.300 INCH, WINDOWED, CERDIP-24

CY7C243-55WMB 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DIP包装说明:0.300 INCH, WINDOWED, CERDIP-24
针数:24Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.61
风险等级:5.31最长访问时间:55 ns
I/O 类型:COMMONJESD-30 代码:R-GDIP-T24
JESD-609代码:e0内存密度:32768 bit
内存集成电路类型:UVPROM内存宽度:8
功能数量:1端子数量:24
字数:4096 words字数代码:4000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:4KX8
输出特性:3-STATE封装主体材料:CERAMIC, GLASS-SEALED
封装代码:DIP封装等效代码:DIP24,.3
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V认证状态:Not Qualified
筛选级别:38535Q/M;38534H;883B子类别:EPROMs
最大压摆率:0.1 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:MILITARY端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

CY7C243-55WMB 数据手册

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1CY7C244  
CY7C243  
CY7C244  
4Kx8 Reprogrammable PROM  
Features  
Functional Description  
The CY7C243 and CY7C244 are high-performance 4K x 8  
CMOS PROMs. The CY7C243 and CY7C244 are packaged in  
300-mil-wide and 600-mil-wide packages respectively. The re-  
programmable packages are equipped with an erasure win-  
dow. When exposed to UV light, these PROMs are erased and  
can then be reprogrammed. The memory cells utilize proven  
EPROM floating-gate technologyand byte-wide intelligent pro-  
gramming algorithms.  
CMOS for optimum speed/power  
Windowed for reprogrammability  
High speed  
20 ns (commercial)  
25 ns (military)  
Low power  
The CY7C243 and CY7C244 are plug-in replacements for bi-  
polar devices and offer the advantages of lower power, supe-  
rior performance and programming yield. The EPROM cell re-  
quires only 12.5V for the supervoltage and low current  
requirements allow for gang programming. The EPROM cells  
allow for each memory location to be tested 100%, as each  
cell is programmed, erased, and repeatedly exercised prior to  
encapsulation. Each PROM is also tested for AC performance  
to guarantee that after customer programming the product will  
meet DC and AC specification limits.  
550 mW (commercial)  
660 mW (military)  
EPROM technology 100% programmable  
300-mil or 600-mil packaging available  
5V ± 10% V , commercial and military  
CC  
Capable of withstanding greater than 2001V static  
discharge  
Read is accomplished by placing an active LOW signal on CS  
1
TTL-compatible I/O  
and an active HIGH on CS . The contents of the memory lo-  
2
Direct replacement for bipolar PROMs  
cation addressed by the address line (A A ) will become  
0
11  
available on the output lines (O O ).  
0
7
Logic Block Diagram  
Pin Configurations  
DIP/Flatboat  
Top View  
A
0
O
7
A
1
V
A
A
A
A
A
1
2
3
4
5
6
7
8
9
10  
11  
12  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
14  
13  
CC  
7
A
A
COLUMN  
MULTI-  
PLEXER  
8
2
6
PROGRAM-  
MABLE  
ARRAY  
A
ROW  
ADDRESS  
9
O
6
5
A
3
A
10  
4
3
CS  
1
A
4
A
11  
A
2
A
5
O
5
CS  
O
O
O
O
O
A
2
1
A
0
7
A
6
7C243  
7C244  
O
6
0
1
ADDRESS  
DECODER  
A
O
O
7
4
5
O
GND  
4
2
A
8
3
C243-2  
O
A
9
3
A
10  
LCC/PLCC(Opaque Only)  
Top View  
COLUMN  
ADDRESS  
O
2
A
11  
O
1
3 2 1 2827  
7C243  
4
26  
25  
A
10  
A
4
5
6
7
8
9
CS  
24  
23  
22  
21  
20  
19  
A
1
11  
CS  
2
3
A
A
2
O
0
A
1
A
0
NC  
7
O
6
CS  
CS  
2
1
NC  
O
10  
11  
O
0
131415161718  
12  
C243-1  
C243-3  
Selection Guide  
7C243-20  
7C244-20  
7C243-25  
7C244-25  
7C243-35  
7C244-35  
7C243-45  
7C244-45  
7C243-55  
7C244-55  
Maximum Access Time (ns)  
20  
25  
35  
80  
45  
80  
55  
80  
Maximum Operating  
Current (mA)  
Commercial  
Military  
100  
100  
120  
100  
100  
100  
Cypress Semiconductor Corporation  
3901 North First Street  
San Jose  
CA 95134  
May 1994 – Revised August 1994  
408-943-2600  

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