CY7C1510KV18, CY7C1525KV18
CY7C1512KV18, CY7C1514KV18
72-Mbit QDR™-II SRAM 2-Word
Burst Architecture
Features
Configurations
■ Separate Independent Read and Write Data Ports
❐ Supports concurrent transactions
CY7C1510KV18 – 8M x 8
CY7C1525KV18 – 8M x 9
CY7C1512KV18 – 4M x 18
CY7C1514KV18 – 2M x 36
■ 333 MHz Clock for High Bandwidth
■ 2-word Burst on all Accesses
■ Double Data Rate (DDR) Interfaces on both Read and Write
Ports (data transferred at 666 MHz) at 333 MHz
Functional Description
The CY7C1510KV18, CY7C1525KV18, CY7C1512KV18, and
CY7C1514KV18 are 1.8V Synchronous Pipelined SRAMs,
equipped with QDR-II architecture. QDR-II architecture consists
of two separate ports: the read port and the write port to access
the memory array. The read port has dedicated data outputs to
support read operations and the write port has dedicated data
inputs to support write operations. QDR-II architecture has
separate data inputs and data outputs to completely eliminate
the need to “turnaround” the data bus that exists with common
I/O devices. Access to each port is through a common address
bus. Addresses for read and write addresses are latched on
alternate rising edges of the input (K) clock. Accesses to the
QDR-II read and write ports are completely independent of one
another. To maximize data throughput, both read and write ports
are equipped with DDR interfaces. Each address location is
associated with two 8-bit words (CY7C1510KV18), 9-bit words
(CY7C1525KV18), 18-bit words (CY7C1512KV18), or 36-bit
words (CY7C1514KV18) that burst sequentially into or out of the
device. Because data can be transferred into and out of the
device on every rising edge of both input clocks (K and K and C
and C), memory bandwidth is maximized while simplifying
system design by eliminating bus turnarounds.
■ Two Input Clocks (K and K) for precise DDR timing
❐ SRAM uses rising edges only
■ Two Input Clocks for Output Data (C and C) to minimize Clock
Skew and Flight Time mismatches
■ Echo Clocks (CQ and CQ) simplify Data Capture in High Speed
Systems
■ Single Multiplexed Address Input bus latches Address Inputs
for both Read and Write Ports
■ Separate Port Selects for Depth Expansion
■ Synchronous internally Self-timed Writes
■ QDR™-II operates with 1.5 Cycle Read Latency when DOFF
is asserted HIGH
■ Operates similar to QDR-I Device with 1 Cycle Read Latency
when DOFF is asserted LOW
■ Available in x8, x9, x18, and x36 Configurations
■ Full Data Coherency, providing Most Current Data
Depth expansion is accomplished with port selects, which
enables each port to operate independently.
■ Core VDD = 1.8V (±0.1V); IO VDDQ = 1.4V to VDD
❐ Supports both 1.5V and 1.8V IO supply
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.
■ Available in 165-ball FBGA Package (13 x 15 x 1.4 mm)
■ Offered in both Pb-free and non Pb-free Packages
■ Variable Drive HSTL Output Buffers
■ JTAG 1149.1 Compatible Test Access Port
■ Phase Locked Loop (PLL) for Accurate Data Placement
Table 1. Selection Guide
Description
333 MHz
333
300 MHz
300
250 MHz
250
200 MHz
200
167 MHz
167
Unit
MHz
mA
Maximum Operating Frequency
Maximum Operating Current
x8
x9
790
730
640
540
480
790
730
640
540
480
x18
x36
810
750
650
550
490
990
910
790
660
580
Cypress Semiconductor Corporation
Document Number: 001-00436 Rev. *E
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised March 30, 2009
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