Datasheet > CY7C1463KV33-133AXC

CY7C1463KV33-133AXC

更新时间： 2024-09-29 01:13:03

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器
页数	文件大小	规格书
23页	2204K
描述
36-Mbit (1M Ã 36/2M Ã 18) Flow-Through SRAM with NoBLâ¢ Architecture

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CY7C1461KV33

CY7C1463KV33

36-Mbit (1M × 36/2M × 18) Flow-Through SRAM

with NoBL™ Architecture

36-Mbit (1M

× 36/2M × 18) Flow-Through SRAM with NoBL™ Architecture

Features

Functional Description

■ No Bus Latency™ (NoBL™) architecture eliminates dead

cycles between write and read cycles

The

CY7C1461KV33/CY7C1463KV33

are

3.3 V,

1M × 36/2M × 18 Synchronous Flow-Through Burst SRAMs

designed specifically to support unlimited true back-to-back read

and write operations without the insertion of wait states. The

CY7C1461KV33/CY7C1463KV33 is equipped with the advanced

NoBL logic required to enable consecutive read and write

operations with data being transferred on every clock cycle. This

feature dramatically improves the throughput of data through the

SRAM, especially in systems that require frequent write-read

transitions.

■ Supports up to 133 MHz bus operations with zero wait states

❐ Data is transferred on every clock

■ Pin compatible and functionally equivalent to ZBT™ devices

■ Internally self timed output buffer control to eliminate the need

to use OE

■ Registered inputs for flow through operation

■ Byte write capability

All synchronous inputs pass through input registers controlled by

the rising edge of the clock. The clock input is qualified by the

Clock Enable (CEN) signal, which when deasserted suspends

operation and extends the previous clock cycle. Maximum

access delay from the clock rise is 6.5 ns (133 MHz device).

■ 3.3 V and 2.5 V I/O power supply

■ Fast clock-to-output times

❐ 6.5 ns (for 133-MHz device)

Write operations are controlled by the two or four Byte Write

Select (BW_X) and a Write Enable (WE) input. All writes are

conducted with on-chip synchronous self timed write circuitry.

■ Clock Enable (CEN) pin to enable clock and suspend operation

■ Synchronous self timed writes

Three synchronous Chip Enables (CE₁, CE₂, CE₃) and an

asynchronous Output Enable (OE) provide for easy bank

selection and output tri-state control. To avoid bus contention,

the output drivers are synchronously tri-stated during the data

portion of a write sequence.

■ Asynchronous Output Enable

■ CY7C1461KV33,

CY7C1463KV33

available

JEDEC-standard Pb-free 100-pin TQFP packages

■ Three chip enables for simple depth expansion

■ Automatic power down feature available using ZZ mode or CE

deselect

■ Burst capability – linear or interleaved burst order

■ Low standby power

Selection Guide

Description

Maximum access time

133 MHz

6.5

Unit

Maximum operating current

× 18

× 36

150

170

Cypress Semiconductor Corporation

Document Number: 001-66681 Rev. *G

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised June 7, 2016

12 3 4 5 6 7...23

中文翻译

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CY7C1463KV33-133AXC 替代型号

型号	品牌	替代类型	描述	数据表
CY7C1463AV33-133AXC	CYPRESS	完全替代	36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Thr

与CY7C1463KV33-133AXC相关器件

型号	品牌	获取价格	描述	数据表
CY7C1463V25	ETC	获取价格	Memory
CY7C1463V25-117BGC	CYPRESS	获取价格	ZBT SRAM, 2MX18, 7.5ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119
CY7C1463V25-117BZC	CYPRESS	获取价格	ZBT SRAM, 2MX18, 7.5ns, CMOS, PBGA165, 15 X 17 MM, 1.20 MM HEIGHT, FBGA-165
CY7C1463V25-133BZC	CYPRESS	获取价格	ZBT SRAM, 2MX18, 6.5ns, CMOS, PBGA165, 15 X 17 MM, 1.20 MM HEIGHT, FBGA-165
CY7C1463V25-150BZC	CYPRESS	获取价格	ZBT SRAM, 2MX18, 5.5ns, CMOS, PBGA165, 15 X 17 MM, 1.20 MM HEIGHT, FBGA-165
CY7C1463V33	ETC	获取价格	Memory
CY7C1463V33-117AC	CYPRESS	获取价格	ZBT SRAM, 2MX18, 7.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
CY7C1463V33-117BGC	CYPRESS	获取价格	ZBT SRAM, 2MX18, 7.5ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119
CY7C1463V33-117BZC	CYPRESS	获取价格	ZBT SRAM, 2MX18, 7.5ns, CMOS, PBGA165, 15 X 17 MM, 1.20 MM HEIGHT, FBGA-165
CY7C1463V33-133BGC	CYPRESS	获取价格	ZBT SRAM, 2MX18, 6.5ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119

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