Datasheet > CY7C1425V18-250BZC

CY7C1425V18-250BZC

更新时间： 2024-11-27 03:58:23

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器
页数	文件大小	规格书
23页	409K
描述
36-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture

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CY7C1425V18-250BZC 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	BGA	包装说明：	15 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, FBGA-165
针数：	165	Reach Compliance Code：	compliant
ECCN代码：	3A991.B.2.A	HTS代码：	8542.32.00.41
风险等级：	5.92	最长访问时间：	0.45 ns
其他特性：	PIPELINED ARCHITECTURE	最大时钟频率 (fCLK)：	250 MHz
I/O 类型：	SEPARATE	JESD-30 代码：	R-PBGA-B165
JESD-609代码：	e0	长度：	17 mm
内存密度：	37748736 bit	内存集成电路类型：	QDR SRAM
内存宽度：	9	功能数量：	1
端子数量：	165	字数：	4194304 words
字数代码：	4000000	工作模式：	SYNCHRONOUS
最高工作温度：	70 °C	最低工作温度：
组织：	4MX9	输出特性：	3-STATE
封装主体材料：	PLASTIC/EPOXY	封装代码：	LBGA
封装等效代码：	BGA165,11X15,40	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, LOW PROFILE	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	225	电源：	1.5/1.8,1.8 V
认证状态：	Not Qualified	座面最大高度：	1.4 mm
最小待机电流：	1.7 V	子类别：	SRAMs
最大供电电压 (Vsup)：	1.9 V	最小供电电压 (Vsup)：	1.7 V
标称供电电压 (Vsup)：	1.8 V	表面贴装：	YES
技术：	CMOS	温度等级：	COMMERCIAL
端子面层：	TIN LEAD SILVER	端子形式：	BALL
端子节距：	1 mm	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	30	宽度：	15 mm
Base Number Matches：	1

CY7C1425V18-250BZC 数据手册

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CY7C1410V18

CY7C1425V18

CY7C1412V18

CY7C1414V18

PRELIMINARY

36-Mbit QDR-II™ SRAM 2-Word

Burst Architecture

Features

Functional Description

• Separate Independent Read and Write data ports

The CY7C1410V18, CY7C1425V18, CY7C1412V18, and

CY7C1414V18 are 1.8V Synchronous Pipelined SRAMs,

equipped with QDR™-II architecture. QDR-II architecture

consists of two separate ports to access the memory array.

The Read port has dedicated Data Outputs to support Read

operations and the Write Port has dedicated Data Inputs to

support Write operations. QDR-II architecture has separate

data inputs and data outputs to completely eliminate the need

to “turn-around” the data bus required with common I/O

devices. Access to each port is accomplished through a

common address bus. The Read address is latched on the

rising edge of the K clock and the Write address is latched on

the rising edge of the K clock. Accesses to the QDR-II Read

and Write ports are completely independent of one another. In

order to maximize data throughput, both Read and Write ports

are equipped with Double Data Rate (DDR) interfaces. Each

address location is associated with two 8-bit words

(CY7C1410V18) or 9-bit words (CY7C1425V18) or 18-bit

words (CY7C1412V18) or 36-bit words (CY7C1414V18) that

burst sequentially into or out of the device. Since data can be

transferred into and out of the device on every rising edge of

both input clocks (K and K and C and C), memory bandwidth

is maximized while simplifying system design by eliminating

bus “turn-arounds.”

— Supports concurrent transactions

• 200-MHz clock for high bandwidth

• 2-Word Burst on all accesses

• Double Data Rate (DDR) interfaces on both Read and

Write ports (data transferred at 400 MHz) @ 200 MHz

• Two input clocks (K and K) for precise DDR timing

— SRAM uses rising edges only

• Two output clocks (C and C) accounts for clock skew

and flight time mismatching

• Echo clocks (CQ and CQ) simplify data capture in

high-speed systems

• Single multiplexed address input bus latches address

inputs for both Read and Write ports

• Separate Port Selects for depth expansion

• Synchronous internally self-timed writes

• Available in x8, x9, x18, and x36 configurations

• Full data coherency, providing most current data

• Core V_DD= 1.8V (±0.1V); I/O V_DDQ= 1.4V to V_DD

• 15 × 17 × 1.4 mm 1.0-mm pitch FBGA package, 165-ball

(11 × 15 matrix)

Depth expansion is accomplished with Port Selects for each

port. Port selects allow each port to operate independently.

• Variable drive HSTL output buffers

All synchronous inputs pass through input registers controlled

by the K or K input clocks. All data outputs pass through output

registers controlled by the C or C (or K or K in a single clock

domain) input clocks. Writes are conducted with on-chip

synchronous self-timed write circuitry.

• JTAG 1149.1 compatible test access port

• Delay Lock Loop (DLL) for accurate data placement

Configurations

CY7C1410V18 – 4M x 8

CY7C1425V18 – 4M x 9

CY7C1412V18 – 2M x 18

CY7C1414V18 – 1M x 36

Cypress Semiconductor Corporation

Document #: 38-05592 Rev. **

•

3901 North First Street

•

San Jose, CA 95134

•

408-943-2600

Revised June 07, 2004

12 3 4 5 6 7...23

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与CY7C1425V18-250BZC相关器件

型号	品牌	获取价格	描述	数据表
CY7C1426AV18	CYPRESS	获取价格	RAM9 QDR-I/DDR-I/QDR-II/DDR- II Errata
CY7C1426AV18-167BZC	CYPRESS	获取价格	36-Mbit QDR⑩-II SRAM 4-Word Burst Architectur
CY7C1426AV18-167BZI	CYPRESS	获取价格	36-Mbit QDR⑩-II SRAM 4-Word Burst Architectur
CY7C1426AV18-167BZXC	CYPRESS	获取价格	36-Mbit QDR⑩-II SRAM 4-Word Burst Architectur
CY7C1426AV18-167BZXI	CYPRESS	获取价格	36-Mbit QDR⑩-II SRAM 4-Word Burst Architectur
CY7C1426AV18-200BZC	CYPRESS	获取价格	36-Mbit QDR⑩-II SRAM 4-Word Burst Architectur
CY7C1426AV18-200BZI	CYPRESS	获取价格	36-Mbit QDR⑩-II SRAM 4-Word Burst Architectur
CY7C1426AV18-200BZXC	CYPRESS	获取价格	36-Mbit QDR⑩-II SRAM 4-Word Burst Architectur
CY7C1426AV18-200BZXI	CYPRESS	获取价格	36-Mbit QDR⑩-II SRAM 4-Word Burst Architectur
CY7C1426AV18-250BZC	CYPRESS	获取价格	36-Mbit QDR⑩-II SRAM 4-Word Burst Architectur

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