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CY7C1386DV25-167BGI PDF预览

CY7C1386DV25-167BGI

更新时间: 2023-08-15 00:00:00
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器
页数 文件大小 规格书
29页 536K
描述
Cache SRAM, 512KX36, 3.4ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, BGA-119

CY7C1386DV25-167BGI 数据手册

 浏览型号CY7C1386DV25-167BGI的Datasheet PDF文件第23页浏览型号CY7C1386DV25-167BGI的Datasheet PDF文件第24页浏览型号CY7C1386DV25-167BGI的Datasheet PDF文件第25页浏览型号CY7C1386DV25-167BGI的Datasheet PDF文件第26页浏览型号CY7C1386DV25-167BGI的Datasheet PDF文件第27页浏览型号CY7C1386DV25-167BGI的Datasheet PDF文件第28页 
CY7C1386DV25  
CY7C1387DV25  
Document History Page  
Document Title: CY7C1386DV25/CY7C1387DV25 18-Mbit (512K x 36/1M x 18)  
Pipelined DCD Sync SRAM  
Document Number: 38-05548  
Orig. of  
REV.  
**  
ECN NO. Issue Date Change  
Description of Change  
254550  
288531  
See ECN  
See ECN  
RKF  
SYT  
New data sheet  
*A  
Edited description under “IEEE 1149.1 Serial Boundary Scan (JTAG)” for  
non-compliance with 1149.1  
Removed 225 Mhz Speed Bin  
Added lead-free information for 100-Pin TQFP, 119 BGA and 165 FBGA  
Packages  
Added comment of ‘Lead-free BG packages availability’ below the Ordering  
Information  
*B  
326078  
See ECN  
PCI  
Address expansion pins/balls in the pinouts for all packages are modified as  
per JEDEC standard  
Added description on EXTEST Output Bus Tri-State  
Changed description on the Tap Instruction Set Overview and Extest  
Changed Device Width (23:18) for 119-BGA from 000110 to 101110  
Added separate row for 165 -FBGA Device Width (23:18)  
Changed ΘJA and ΘJC for TQFP Package from 31 and 6 °C/W to 28.66 and  
4.08 °C/W respectively  
Changed ΘJA and ΘJC for BGA Package from 45 and 7 °C/W to 23.8 and 6.2  
°C/W respectively  
Changed ΘJA and ΘJC for FBGA Package from 46 and 3 °C/W to 20.7 and  
4.0 °C/W respectively  
Modified VOL, VOH test conditions  
Removed shading on DC Table for 200 MHz speed bin  
Removed comment of ‘Lead-free BG packages availability’ below the  
Ordering Information  
*C  
418125  
See ECN  
NXR  
Changed address of Cypress Semiconductor Corporation on Page# 1 from  
“3901 North First Street” to “198 Champion Court”  
Changed the description of IX from Input Load Current to Input Leakage  
Current on page# 18  
Changed the IX current values of MODE on page # 18 from –5 µA and 30 µA  
to –30 µA and 5 µA  
Changed the IX current values of ZZ on page # 18 from –30 µA and 5 µA  
to °5 µA and 30 µA  
Changed VIH < VDD to VIH < VDDon page # 18  
Updated Ordering Information Table  
*D  
475009  
See ECN  
VKN  
Converted from Preliminary to Final.  
Added the Maximum Rating for Supply Voltage on VDDQ Relative to GND  
Changed tTH, tTL from 25 ns to 20 ns and tTDOV from 5 ns to 10 ns in TAP  
AC Switching Characteristics table.  
Updated the Ordering Information table.  
Document #: 38-05548 Rev. *D  
Page 29 of 29  

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