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CY7C1360A-150BGI PDF预览

CY7C1360A-150BGI

更新时间: 2024-02-12 22:03:32
品牌 Logo 应用领域
罗彻斯特 - ROCHESTER 静态存储器内存集成电路
页数 文件大小 规格书
28页 561K
描述
Cache SRAM, 256KX36, 4.5ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, BGA-119

CY7C1360A-150BGI 技术参数

生命周期:Contact Manufacturer包装说明:BGA,
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.68
最长访问时间:4.5 ns其他特性:PIPELINE ARCHITECTURE
JESD-30 代码:R-PBGA-B119长度:22 mm
内存密度:9437184 bit内存集成电路类型:CACHE SRAM
内存宽度:36功能数量:1
端子数量:119字数:262144 words
字数代码:256000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:256KX36封装主体材料:PLASTIC/EPOXY
封装代码:BGA封装形状:RECTANGULAR
封装形式:GRID ARRAY并行/串行:PARALLEL
座面最大高度:2.4 mm最大供电电压 (Vsup):3.63 V
最小供电电压 (Vsup):3.135 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:BALL
端子节距:1.27 mm端子位置:BOTTOM
宽度:14 mmBase Number Matches:1

CY7C1360A-150BGI 数据手册

 浏览型号CY7C1360A-150BGI的Datasheet PDF文件第4页浏览型号CY7C1360A-150BGI的Datasheet PDF文件第5页浏览型号CY7C1360A-150BGI的Datasheet PDF文件第6页浏览型号CY7C1360A-150BGI的Datasheet PDF文件第8页浏览型号CY7C1360A-150BGI的Datasheet PDF文件第9页浏览型号CY7C1360A-150BGI的Datasheet PDF文件第10页 
CY7C1360A  
CY7C1362A  
512K × 18 Pin Descriptions (continued)  
X18 PBGA Pins  
X18 QFP Pins  
92  
Name  
Type  
Description  
Chip Enable: This active LOW input is used to enable the  
CE3  
Input-  
(not available for  
PBGA)  
(for A Version only)  
Synchronous device. Not available for BG and AJ package versions.  
4F  
86  
83  
OE  
Input  
Output Enable: This active LOW asynchronous input  
enables the data output drivers.  
4G  
ADV  
Input-  
Address Advance: This active LOW input is used to  
Synchronous control the internal burst counter. A HIGH on this pin  
generates wait cycle (no address advance).  
4A  
4B  
84  
85  
ADSP  
ADSC  
Input-  
Address Status Processor: This activeLOWinput, along  
Synchronous with CE being LOW, causes a new external address to be  
registered and a Read cycle is initiated using the new  
address.  
Input-  
Address Status Controller: This active LOW input  
Synchronous causes device to be deselectedor selectedalongwith new  
external address to be registered. A Read or Write cycle  
is initiated depending upon Write control inputs.  
3R  
7T  
31  
64  
MODE  
ZZ  
Input-  
Static  
Mode: This input selects the burst sequence. A LOW on  
this pin selects Linear Burst. An NC or HIGH on this pin  
selects Interleaved Burst.  
Input-  
Sleep:This active HIGH inputputs thedevice in low power  
Asynchronous consumption standby mode. For normal operation, this  
input has to be either LOW or NC (No Connect).  
(a)6D,7E,6F,7G,6H, (a) 58, 59, 62, 63, DQa  
Input/  
Output  
Data Inputs/Outputs: Low Byte is DQa. HighByte is DQb.  
Input data must meet set up and hold times around the  
rising edge of CLK.  
7K, 6L, 6N, 7P  
68, 69, 72, 73, 74 DQb  
(b) 8, 9, 12, 13, 18,  
19, 22, 23, 24  
(b) 1D, 2E, 2G, 1H,  
2K, 1L, 2M, 1N, 2P  
2U  
3U  
4U  
38  
39  
43  
TMS  
TDI  
TCK  
Input  
IEEE 1149.1 test inputs. LVTTL-level inputs. Not  
available for A package version.  
for BG and AJ  
versions  
5U  
42  
TDO  
Output  
IEEE 1149.1 test output. LVTTL-level output. Not  
for BG and AJ  
available for A package version.  
version  
4C, 2J, 4J, 6J, 4R  
15, 41,65, 91  
VCC  
Supply  
Ground  
Core power supply: +3.3V 5% and +10%  
Ground: GND.  
3D, 5D, 3E, 5E, 3F, 5, 10, 17, 21, 26, VSS  
5F, 5G, 3H, 5H, 3K, 40, 55, 60, 67, 71,  
5K, 3L, 3M, 5M, 3N, 76, 90  
5N, 3P, 5P  
1A, 7A, 1F, 7F, 1J, 7J, 4, 11, 20, 27, 54,  
1M, 7M, 1U, 7U 61, 70, 77  
VCCQ  
I/O Power  
Supply  
Power Supply for the I/O circuitry  
1B, 7B, 1C, 7C, 2D, 13, 6, 7, 14, 16, NC  
4D, 7D, 1E, 6E, 2F, 25, 2830, 5153,  
1G, 6G, 2H, 7H, 3J, 56, 57, 66, 75, 78,  
5J, 1K, 6K, 2L, 4L, 7L, 79, 80, 95, 96  
6M, 2N, 7N, 1P, 6P, 38, 39, 42 for A  
1R, 5R, 7R, 1T, 4T, 6U Version  
No Connect: These signals are not internally connected.  
User can leave it floating or connect it to VCC or VSS  
.
Document #: 38-05258 Rev. *C  
Page 7 of 28  

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