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CY7C09369V-6AXC PDF预览

CY7C09369V-6AXC

更新时间: 2024-01-14 22:53:04
品牌 Logo 应用领域
罗彻斯特 - ROCHESTER 静态存储器内存集成电路
页数 文件大小 规格书
20页 1231K
描述
16KX18 DUAL-PORT SRAM, 6.5ns, PQFP100, LEAD FREE, PLASTIC, MS-026, TQFP-100

CY7C09369V-6AXC 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:QFP
包装说明:LEAD FREE, PLASTIC, MS-026, TQFP-100针数:100
Reach Compliance Code:unknown风险等级:5.78
Is Samacsys:N最长访问时间:6.5 ns
其他特性:FLOW-THROUGH OR PIPELINED ARCHITECTUREJESD-30 代码:S-PQFP-G100
JESD-609代码:e3/e4长度:14 mm
内存密度:294912 bit内存集成电路类型:DUAL-PORT SRAM
内存宽度:18湿度敏感等级:3
功能数量:1端子数量:100
字数:16384 words字数代码:16000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:16KX18
封装主体材料:PLASTIC/EPOXY封装代码:LFQFP
封装形状:SQUARE封装形式:FLATPACK, LOW PROFILE, FINE PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):260
认证状态:COMMERCIAL座面最大高度:1.6 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:MATTE TIN/NICKEL PALLADIUM GOLD端子形式:GULL WING
端子节距:0.5 mm端子位置:QUAD
处于峰值回流温度下的最长时间:20宽度:14 mm
Base Number Matches:1

CY7C09369V-6AXC 数据手册

 浏览型号CY7C09369V-6AXC的Datasheet PDF文件第3页浏览型号CY7C09369V-6AXC的Datasheet PDF文件第4页浏览型号CY7C09369V-6AXC的Datasheet PDF文件第5页浏览型号CY7C09369V-6AXC的Datasheet PDF文件第7页浏览型号CY7C09369V-6AXC的Datasheet PDF文件第8页浏览型号CY7C09369V-6AXC的Datasheet PDF文件第9页 
CY7C09269V/79V/89V  
CY7C09369V/79V/89V  
Maximum Ratings [12]  
DC Input Voltage..........................................−0.5V to VCC+0.5V  
Output Current into Outputs (LOW)............................. 20 mA  
Exceeding maximum ratings may impair the useful life of the  
device. These user guidelines are not tested.  
Static Discharge Voltage.......................................... > 1100V  
(per MIL-STD-883, Method 3015)  
Storage Temperature ..................................... −65°C to +150°C  
Latch up Current.................................................... > 200 mA  
Ambient Temperature with  
Power Applied.................................................. −55°C to +125°C  
Operating Range  
Supply Voltage to Ground Potential .................−0.5V to +4.6V  
Range  
Commercial  
Industrial  
Ambient Temperature  
0°C to +70°C  
VCC  
DC Voltage Applied to Outputs  
in High Z State ..............................................−0.5V to VCC+0.5V  
3.3V ± 300 mV  
3.3V ± 300 mV  
–40°C to +85°C  
Electrical Characteristics  
Over the Operating Range  
CY7C09269V/79V/89V  
CY7C09369V/79V/89V  
-7[2]  
-9  
Parameter  
Description  
Unit  
-12  
-6[1, 2]  
Min Typ Max Min Typ Max Min Typ Max Min Typ Max  
VOH  
VOL  
Output HIGH Voltage  
(VCC = Min. lOH = –4.0 mA)  
2.4  
2.4  
2.4  
2.4  
V
V
Output LOW Voltage  
(VCC = Min. lOH = +4.0 mA)  
0.4  
0.8  
0.4  
0.8  
0.4  
0.8  
0.4  
VIH  
VIL  
IOZ  
ICC  
Input HIGH Voltage  
Input LOW Voltage  
2.0  
2.0  
2.0  
2.0  
V
V
0.8  
10  
Output Leakage Current  
–10  
10 –10  
175 320  
10 –10  
155 275  
275 390  
10 –10  
135 230  
185 300  
μA  
Operating Current  
(VCC = Max, IOUT = 0 mA)  
Outputs Disabled  
Com’l.  
Indust.  
115 180 mA  
mA  
ISB1  
ISB2  
ISB3  
ISB4  
Standby Current  
Com’l.  
Indust.  
25 95  
115 175  
10 250  
105 135  
25  
85  
20  
35  
75  
85  
20  
70 mA  
mA  
(Both Ports TTL Level)[13]  
CEL & CER VIH, f = fMAX  
85 120  
Standby Current  
Com’l.  
Indust.  
105 165  
165 210  
95 155  
105 165  
85 140 mA  
mA  
(One Port TTL Level)[13]  
CEL | CER VIH, f = fMAX  
Standby Current  
Com’l.  
Indust.  
10 250  
10 250  
10 250  
10 250  
10 250 μA  
μA  
(Both Ports CMOS Level)[13]  
CEL & CER VCC – 0.2V, f = 0  
Standby Current  
Com’l.  
Indust.  
95 125  
125 170  
85 115  
95 125  
75 100 mA  
mA  
(One Port CMOS Level)[13]  
CEL | CER VIH, f = fMAX  
Capacitance  
Tested initially and after any design or process changes that may affect these parameters.  
Parameter  
CIN  
Description  
Input Capacitance  
Output Capacitance  
Test Conditions  
TA = 25°C, f = 1 MHz, VCC = 3.3V  
Max  
10  
Unit  
pF  
COUT  
10  
pF  
Notes  
12. The voltage on any input or I/O pin can not exceed the power pin during power up.  
13. CE and CE are internal signals. To select either the left or right port, both CE and CE must be asserted to their active states (CE V and CE V ).  
L
R
0
1
0
IL  
1
IH  
Document #: 38-06056 Rev. *C  
Page 5 of 19  
[+] Feedback  

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