CY74FCT2543T
8-BIT LATCHED TRANSCEIVER
WITH 3-STATE OUTPUTS
SCCS042C – SEPTEMBER 1994 – REVISED NOVEMBER 2001
Q OR SO PACKAGE
(TOP VIEW)
Function and Pinout Compatible With FCT
and F Logic
25- Output Series Resistors to Reduce
Transmission-Line Reflection Noise
LEBA
OEBA
V
CC
CEBA
1
24
23
22
21
20
19
18
17
16
15
14
2
Reduced V
of Equivalent FCT Functions
(Typically = 3.3 V) Versions
A
0
B
3
OH
0
A
B
1
4
1
A
2
B
5
Edge-Rate Control Circuitry for
Significantly Improved Noise
Characteristics
2
A
B
3
6
3
A
4
B
7
4
A
B
5
8
5
I
Supports Partial-Power-Down Mode
off
A
6
B
9
6
Operation
A
B
7
LEAB
10
11
7
Matched Rise and Fall Times
CEAB
Fully Compatible With TTL Input and
Output Logic Levels
GND 12
13 OEAB
12-mA Output Sink Current
15-mA Output Source Current
Separation Controls for Data Flow in Each
Direction
Back-to-Back Latches for Storage
ESD Protection Exceeds JESD 22
– 2000-V Human-Body Model (A114-A)
– 200-V Machine Model (A115-A)
– 1000-V Charged-Device Model (C101)
3-State Outputs
description
The CY74FCT2543T octal latched transceiver contains two sets of eight D-type latches. Separate latch enable
(LEAB, LEBA) and output enable (OEAB, OEBA) inputs permit each latch set to have independent control of
inputting and outputting in either direction of data flow. For example, for data flow from A to B, the A-to-B enable
(CEAB) input must be low to enter data from A or to take data from B, as indicated in the function table. With
CEAB low, a low signal on the A-to-B latch enable (LEAB) input makes the A-to-B latches transparent; a
subsequent low-to-high transition of LEAB puts the A latches in the storage mode and their outputs no longer
change with the A inputs. With CEAB and OEAB both low, the 3-state B output buffers are active and reflect
data present at the output of the A latches. Control of data from B to A is similar, but uses CEAB, LEAB, and
OEAB inputs. On-chip termination resistors at the outputs reduce system noise caused by reflections. The
CY74FCT2543T can replace the CY74FCT543T to reduce noise in an existing design.
This device is fully specified for partial-power-down applications using I . The I circuitry disables the outputs,
off
off
preventing damaging current backflow through the device when it is powered down.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright 2001, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
1
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