5秒后页面跳转
CY62128EV30LL-45ZXI PDF预览

CY62128EV30LL-45ZXI

更新时间: 2024-02-28 05:39:20
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
11页 946K
描述
1 Mbit (128K x 8) Static RAM

CY62128EV30LL-45ZXI 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:TSOP1, TSSOP32,.8,20
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:1.38
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:891613Samacsys Pin Count:32
Samacsys Part Category:Integrated CircuitSamacsys Package Category:Small Outline Packages
Samacsys Footprint Name:CY62128ELL-45ZXITSamacsys Released Date:2020-03-25 11:04:09
Is Samacsys:N最长访问时间:45 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G32
JESD-609代码:e3长度:18.4 mm
内存密度:1048576 bit内存集成电路类型:STANDARD SRAM
内存宽度:8湿度敏感等级:3
功能数量:1端子数量:32
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:128KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装等效代码:TSSOP32,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:2.5/3.3 V认证状态:Not Qualified
座面最大高度:1.2 mm最大待机电流:0.000003 A
最小待机电流:1.5 V子类别:SRAMs
最大压摆率:0.016 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.2 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:8 mmBase Number Matches:1

CY62128EV30LL-45ZXI 数据手册

 浏览型号CY62128EV30LL-45ZXI的Datasheet PDF文件第2页浏览型号CY62128EV30LL-45ZXI的Datasheet PDF文件第3页浏览型号CY62128EV30LL-45ZXI的Datasheet PDF文件第4页浏览型号CY62128EV30LL-45ZXI的Datasheet PDF文件第5页浏览型号CY62128EV30LL-45ZXI的Datasheet PDF文件第6页浏览型号CY62128EV30LL-45ZXI的Datasheet PDF文件第7页 
CY62128EV30 MoBL®  
1 Mbit (128K x 8) Static RAM  
Features  
Functional Description[1]  
• Very high speed: 45 ns  
The CY62128EV30 is a high performance CMOS static RAM  
module organized as 128K words by 8 bits. This device  
features advanced circuit design to provide ultra low active  
current. This is ideal for providing More Battery Life™ (MoBL®)  
in portable applications such as cellular telephones. The  
device also has an automatic power down feature that signifi-  
cantly reduces power consumption when addresses are not  
toggling. Placing the device into standby mode reduces power  
consumption by more than 99% when deselected (CE1 HIGH  
or CE2 LOW). The eight input and output pins (IO0 through  
IO7) are placed in a high impedance state when the device is  
deselected (CE1 HIGH or CE2 LOW), the outputs are disabled  
(OE HIGH), or a write operation is in progress (CE1 LOW and  
CE2 HIGH and WE LOW).  
Temperature ranges–  
— Industrial: –40°C to +85°C  
— Automotive-A: –40°C to +85°C  
— Automotive-E: –40°C to +125°C  
• Wide voltage range: 2.20V – 3.60V  
• Pin compatible with CY62128DV30  
• Ultra low standby power  
— Typical standby current: 1 µA  
— Maximum standby current: 4 µA  
• Ultra low active power  
To write to the device, take Chip Enable (CE1 LOW and CE2  
HIGH) and Write Enable (WE) inputs LOW. Data on the eight  
IO pins is then written into the location specified on the  
Address pin (A0 through A16).  
— Typical active current: 1.3 mA @ f = 1 MHz  
• Easy memory expansion with CE1, CE2 and OE features  
• Automatic power down when deselected  
• CMOS for optimum speed and power  
To read from the device, take Chip Enable (CE1 LOW and CE2  
HIGH) and Output Enable (OE) LOW while forcing Write  
Enable (WE) HIGH. Under these conditions, the contents of  
the memory location specified by the address pins appear on  
the IO pins.  
• Offered in Pb-free 32-pin SOIC, 32-pin TSOP I, and 32-pin  
STSOP packages  
Logic Block Diagram  
IO  
0
INPUT BUFFER  
A
A
A
A
A
A
A
A
A
0
1
2
3
4
5
6
7
8
IO  
1
IO  
2
128K x 8  
ARRAY  
IO  
3
IO  
IO  
IO  
IO  
4
5
6
7
A
A
A
9
10  
11  
CE  
CE  
1
2
POWER  
DOWN  
COLUMN DECODER  
WE  
OE  
Note  
1. For best practice recommendations, refer to the Cypress application note “System Design Guidelines” at http://www.cypress.com.  
Cypress Semiconductor Corporation  
Document #: 38-05579 Rev. *C  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised May 07, 2007  
[+] Feedback  

CY62128EV30LL-45ZXI 替代型号

型号 品牌 替代类型 描述 数据表
CY62128EV30LL-45ZXA CYPRESS

完全替代

1 Mbit (128K x 8) Static RAM
CY62128EV30LL-45ZXIT CYPRESS

类似代替

1-Mbit (128 K x 8) Static RAM
CY62128DV30LL-70ZXI CYPRESS

类似代替

1-Mb (128K x 8) Static RAM

与CY62128EV30LL-45ZXI相关器件

型号 品牌 获取价格 描述 数据表
CY62128EV30LL-45ZXIT CYPRESS

获取价格

1-Mbit (128 K x 8) Static RAM
CY62128EV30LL-45ZXIT INFINEON

获取价格

Asynchronous SRAM
CY62128EV30LL-55SXET CYPRESS

获取价格

SRAM,
CY62128EV30LL-55ZXE CYPRESS

获取价格

1 Mbit (128K x 8) Static RAM
CY62128L-70SC CYPRESS

获取价格

128K x 8 Static RAM
CY62128L-70SCT CYPRESS

获取价格

Standard SRAM, 128KX8, 70ns, CMOS, PDSO32, 0.450 INCH, PLASTIC, SOIC-32
CY62128L-70SCTR ETC

获取价格

x8 SRAM
CY62128L-70SI ETC

获取价格

x8 SRAM
CY62128L-70SIT CYPRESS

获取价格

Standard SRAM, 128KX8, 70ns, CMOS, PDSO32, TSOP1-32
CY62128L-70ZAC ETC

获取价格

x8 SRAM