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CY62127DV30_09 PDF预览

CY62127DV30_09

更新时间: 2022-12-28 02:40:38
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赛普拉斯 - CYPRESS /
页数 文件大小 规格书
11页 539K
描述
1-Mb (64K x 16) Static RAM

CY62127DV30_09 数据手册

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CY62127DV30  
Switching Characteristics (Over the Operating Range)[11]  
CY62127DV30-45 [8] CY62127DV30-55 CY62127DV30-70  
Parameter  
Read Cycle  
tRC  
Description  
Min.  
45  
Max.  
Min.  
Max.  
Min.  
Max.  
Unit  
Read Cycle Time  
55  
70  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tAA  
Address to Data Valid  
45  
55  
70  
tOHA  
Data Hold from Address Change  
CE LOW to Data Valid  
10  
10  
10  
tACE  
45  
25  
55  
25  
70  
35  
tDOE  
OE LOW to Data Valid  
OE LOW to Low Z[12]  
OE HIGH to High Z[12,14]  
CE LOW to Low Z[12]  
CE HIGH to High Z[12,14]  
tLZOE  
tHZOE  
tLZCE  
tHZCE  
tPU  
5
10  
0
5
10  
0
5
10  
0
15  
20  
20  
20  
25  
25  
CE LOW to Power-up  
tPD  
CE HIGH to Power-down  
BLE/BHE LOW to Data Valid  
BLE/BHE LOW to Low Z[12]  
BLE/BHE HIGH to High-Z[12,14]  
45  
45  
55  
55  
70  
70  
tDBE  
[13]  
tLZBE  
5
5
5
tHZBE  
15  
20  
25  
Write Cycle[15]  
tWC  
tSCE  
tAW  
Write Cycle Time  
45  
40  
40  
0
55  
40  
40  
0
70  
60  
60  
0
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
CE LOW to Write End  
Address Set-up to Write End  
Address Hold from Write End  
Address Set-up to Write Start  
WE Pulse Width  
tHA  
tSA  
0
0
0
tPWE  
tBW  
tSD  
35  
40  
25  
0
40  
40  
25  
0
50  
60  
30  
0
BLE/BHE LOW to Write End  
Data Set-up to Write End  
Data Hold from Write End  
WE LOW to High Z[12,14]  
WE HIGH to Low Z[12]  
tHD  
tHZWE  
15  
20  
25  
tLZWE  
10  
10  
5
Notes:  
11. Test conditions assume signal transition time of 1V/ns or less, timing reference levels of V  
/2, input pulse levels of 0 to V  
, and output loading of the  
CC(typ.)  
CC(typ.)  
specified I  
.
OL  
12. At any given temperature and voltage condition, t  
is less than t  
, t  
is less than t  
, t  
is less than t  
, and t  
is less than t  
for any  
LZWE  
HZCE  
LZCE HZBE  
LZBE HZOE  
LZOE  
HZWE  
given device.  
13. If both byte enables are toggled together, this value is 10 ns.  
14. t , t , t , and t transitions are measured when the outputs enter a high-impedance state.  
HZOE HZCE HZBE  
HZWE  
15. The internal Write time of the memory is defined by the overlap of WE, CE = V , BHE and/or BLE = V . All signals must be ACTIVE to initiate a write and any  
IL  
IL  
of these signals can terminate a write by going INACTIVE. The data input set-up and hold timing should be referenced to the edge of the signal that terminates  
the write.  
Document #: 38-05229 Rev. *H  
Page 5 of 11  
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