Datasheet > CY27C256

CY27C256

更新时间： 2022-12-01 16:22:28

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		可编程只读存储器电动程控只读存储器
页数	文件大小	规格书
11页	264K
描述
32K x 8-Bit CMOS EPROM

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数据手册

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CY27C256 数据手册

CY27C256

Switching Waveform

POWER–DOWN CONTROLLED BY CE

50%

SUPPLY

CURRENT

50%

A - A

ADDRESS

OE, CE

)

HZOE

ACE

HZCE

HIGH Z

O -

PREVIOUS DATA VALID

DATA VALID

27c256–8

within 1 inch of the lamp during erasure. Permanent damage

may result if the EPROM is exposed to high-intensity UV light

for an extended period of time. 7258 Wsec/cm is the recom-

Erasure Characteristics

Wavelengths of light less than 4000 Å begin to erase the

27C256 in the windowed package. For this reason, an opaque

label should be placed over the window if the EPROM is ex-

posed to sunlight or fluorescent lighting for extended periods

of time.

mended maximum dosage.

Programming Modes

Programming support is available from Cypress as well as

from a number of third-party software vendors. For detailed

programming information, including a listing of software pack-

ages, please see the EPROM Programming Information locat-

ed at the end of this section. Programming algorithms can be

obtained from any Cypress representative.

The recommended dose of ultraviolet light for erasure is a

wavelength of 2537 Å for a minimum dose (UV intensity mul-

tiplied by exposure time) of 25 Wsec/cm2. For an ultraviolet

lamp with a 12 mW/cm power rating, the exposure time would

be approximately 35 minutes. The CY27C256 needs to be

Table 1. CY27C256 Mode Selection.

[8]

Mode

Pin Function

-A

O -O

[9]

Read

O -O

Output Disable

Power Down

High Z

Notes:

8. X can be V_ILor V_IH

9. V_PPshould not exceed V_CCin read mode.

1 2 3 456 7 8...11

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