Datasheet > CY14E104K-ZS25XI

CY14E104K-ZS25XI

更新时间： 2024-11-18 06:51:31

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器时钟
页数	文件大小	规格书
28页	712K
描述
4 Mbit (512K x 8 / 256K x 16) nvSRAM with Real-Time-Clock

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

CY14E104K-ZS25XI 数据手册

PRELIMINARY

CY14E104K/CY14E104M

4 Mbit (512K x 8 / 256K x 16) nvSRAM with

Real-Time-Clock

■ Watchdog timer

Features

■ Clock alarm with programmable interrupts

■ Capacitor or battery backup for RTC

■ 15 ns, 20 ns, 25 ns, and 45 ns access times

■ Internally organized as 512K x 8 (CY14E104K) or 256K x 16

(CY14E104M)

■ Commercial and industrial temperatures

■ 44/54-pin TSOP II package

■ Hands off automatic STORE on power down with only a small

capacitor

■ Pb-free and RoHS compliance

■ STORE to QuantumTrap^®nonvolatile elements is initiated by

software, device pin, or AutoStore^®on power down

Functional Description

■ RECALL to SRAM initiated by software or power up

■ High reliability

The Cypress CY14E104K/CY14E104M combines a 4 Mbit

nonvolatile static RAM with a full featured real-time-clock in a

monolithic integrated circuit. The embedded nonvolatile

elements incorporate QuantumTrap technology producing the

world’s most reliable nonvolatile memory. The SRAM is read and

written an infinite number of times, while independent nonvolatile

data resides in the nonvolatile elements.

■ Infinite read, write, and recall cycles

■ 200,000 STORE cycles to QuantumTrap

■ 20 year data retention

The real-time-clock function provides an accurate clock with leap

year tracking and a programmable, high accuracy oscillator. The

alarm function is programmable for one time alarms or periodic

seconds, minutes, hours, or days. There is also a programmable

watchdog timer for process control.

■ Single 5V +10% operation

■ Data integrity of Cypress nvSRAM combined with full featured

Real-Time-Clock

Logic Block Diagram

V_CC

V_RTCcap

V_RTCbat

V_CAP

[1]

Address

A₀- A₁₈

DQ0 - DQ7

HSB

CY14E104K

CY14E104M

INT

X₁

BHE

BLE

X₂

V_SS

Note

1. Address A - A and DQ0 - DQ7 for x8 configuration, Address A - A and Data DQ0 - DQ15 for x16 configuration.

Cypress Semiconductor Corporation

Document #: 001-09604 Rev. *H

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised June 20, 2008

[+] Feedback

12 3 4 5 6 7...28

中文翻译

下载PDF

与CY14E104K-ZS25XI相关器件

型号	品牌	获取价格	描述	数据表
CY14E104K-ZS25XIT	CYPRESS	获取价格	4 Mbit (512K x 8 / 256K x 16) nvSRAM with Real-Time-Clock
CY14E104K-ZS45XCT	CYPRESS	获取价格	4 Mbit (512K x 8 / 256K x 16) nvSRAM with Real-Time-Clock
CY14E104K-ZS45XI	CYPRESS	获取价格	4 Mbit (512K x 8 / 256K x 16) nvSRAM with Real-Time-Clock
CY14E104K-ZS45XIT	CYPRESS	获取价格	4 Mbit (512K x 8 / 256K x 16) nvSRAM with Real-Time-Clock
CY14E104K-ZSP15XCT	CYPRESS	获取价格	4 Mbit (512K x 8 / 256K x 16) nvSRAM with Real-Time-Clock
CY14E104K-ZSP15XI	CYPRESS	获取价格	4 Mbit (512K x 8 / 256K x 16) nvSRAM with Real-Time-Clock
CY14E104K-ZSP15XIT	CYPRESS	获取价格	4 Mbit (512K x 8 / 256K x 16) nvSRAM with Real-Time-Clock
CY14E104K-ZSP20XCT	CYPRESS	获取价格	4 Mbit (512K x 8 / 256K x 16) nvSRAM with Real-Time-Clock
CY14E104K-ZSP20XI	CYPRESS	获取价格	4 Mbit (512K x 8 / 256K x 16) nvSRAM with Real-Time-Clock
CY14E104K-ZSP20XIT	CYPRESS	获取价格	4 Mbit (512K x 8 / 256K x 16) nvSRAM with Real-Time-Clock

与CY14E104K-ZS25XI相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

18
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

43
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

38

产品中心

服务支持

精选活动

关于我们

帮助中心

CY14E104K-ZS25XI

CY14E104K-ZS25XI 数据手册

与CY14E104K-ZS25XI相关器件

与CY14E104K-ZS25XI相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

CY14E104K-ZS25XI

CY14E104K-ZS25XI 数据手册

与CY14E104K-ZS25XI相关器件

与CY14E104K-ZS25XI相关文章

您还可以找

您在本页遇到什么问题？