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CY14B116N-ZSP45XI

更新时间： 2024-11-20 00:41:39
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器
页数 文件大小 规格书
37页 4072K
描述
16-Mbit (2048K × 8/1024K × 16/512K × 32) nvSRAM

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CY14B116N-ZSP45XI 数据手册

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CY14B116L/CY14B116N/CY14B116S  
CY14E116L/CY14E116N/CY14E116S  
16-Mbit (2048K × 8/1024K × 16/512K × 32) nvSRAM  
16-Mbit (2048K  
× 8/1024K × 16/512K × 32) nvSRAM  
■ Offered speeds  
❐ 44-pin TSOP II: 25 ns and 45 ns  
❐ 48-pin TSOP I: 30 ns and 45 ns  
❐ 54-pin TSOP II: 25 ns and 45 ns  
❐ 60-ball FBGA: 25 ns  
Features  
■ 16-Mbit nonvolatile static random access memory (nvSRAM)  
❐ 25-ns, 30-ns and 45-ns access times  
❐ Internally organized as 2048K × 8 (CY14X116L),  
1024K × 16 (CY14X116N), 512K × 32 (CY14X116S)  
❐ Hands-off automatic STORE on power-down with only a  
small capacitor  
❐ STORE to QuantumTrap nonvolatile elements is initiated by  
software, device pin, or AutoStore on power-down  
❐ RECALL to SRAM initiated by software or power-up  
❐ 165-ball FBGA: 25 ns and 45 ns  
Functional Description  
The Cypress CY14X116L/CY14X116N/CY14X116S is a fast  
SRAM, with a nonvolatile element in each memory cell. The  
memory is organized as 2048K bytes of 8 bits each or 1024K  
words of 16 bits each or 512K words of 32 bits each. The  
embedded nonvolatile elements incorporate QuantumTrap  
technology, producing the world’s most reliable nonvolatile  
memory. The SRAM can be read and written an infinite number  
of times. The nonvolatile data residing in the nonvolatile  
elements do not change when data is written to the SRAM. Data  
transfers from the SRAM to the nonvolatile elements (the  
STORE operation) takes place automatically at power-down. On  
power-up, data is restored to the SRAM (the RECALL operation)  
from the nonvolatile memory. Both the STORE and RECALL  
operations are also available under software control.  
■ High reliability  
❐ Infinite read, write, and RECALL cycles  
❐ 1 million STORE cycles to QuantumTrap  
❐ Data retention: 20 years  
■ Sleep mode operation  
■ Low power consumption  
❐ Active current of 75 mA at 45 ns  
❐ Standby mode current of 650 A  
❐ Sleep mode current of 10 A  
■ Operating voltages:  
❐ CY14B116X: VCC = 2.7 V to 3.6 V  
❐ CY14E116X: VCC = 4.5 V to 5.5 V  
For a complete list of related documentation, click here.  
■ Industrial temperature: –40 C to +85 C  
■ Packages  
❐ 44-pin thin small-outline package (TSOP II)  
❐ 48-pin thin small-outline package (TSOP I)  
❐ 54-pin thin small-outline package (TSOP II)  
❐ 60-ball fine-pitch ball grid array (FBGA) package  
❐ 165-ball fine-pitch ball grid array (FBGA) package  
■ Restriction of hazardous substances (RoHS) compliant  
Cypress Semiconductor Corporation  
Document Number: 001-67793 Rev. *N  
•
198 Champion Court  
•
San Jose, CA 95134-1709  
•
408-943-2600  
Revised July 22, 2016  
1234567...37

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CY14B116N-ZSP45XI 替代型号

型号 品牌 替代类型 描述 数据表
CY14B116N-ZSP45XIT CYPRESS

完全替代

 16-Mbit (2048K × 8/1024K × 16/512K × 32) n

与CY14B116N-ZSP45XI相关器件

型号 品牌 获取价格 描述 数据表
CY14B116N-ZSP45XIT CYPRESS

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CY14B116N-ZSP45XIT INFINEON

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CY14B116S CYPRESS

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CY14B116S-BZ25XI CYPRESS

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CY14B116S-BZ25XI INFINEON

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 		nvSRAM (non-volatile SRAM)
CY14B116S-BZ25XIT CYPRESS

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 		16-Mbit (2048K × 8/1024K × 16/512K × 32) n
CY14B116S-BZ25XIT INFINEON

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 		nvSRAM (non-volatile SRAM)
CY14B116S-BZ45XI CYPRESS

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 		16-Mbit (2048K × 8/1024K × 16/512K × 32) n
CY14B116S-BZ45XIT CYPRESS

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CY14B256I CYPRESS

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 		256-Kbit (32 K x 8) Serial (I2C) nvSRAM with Real Time Clock Full-featured RTC

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