Datasheet > CY14B116N-BZ25XI

CY14B116N-BZ25XI

更新时间： 2024-11-20 00:41:39

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器
页数	文件大小	规格书
37页	4072K
描述
16-Mbit (2048K Ã 8/1024K Ã 16/512K Ã 32) nvSRAM

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中文翻译

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数据手册

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CY14B116N-BZ25XI 数据手册

CY14B116L/CY14B116N/CY14B116S

CY14E116L/CY14E116N/CY14E116S

16-Mbit (2048K × 8/1024K × 16/512K × 32) nvSRAM

16-Mbit (2048K

× 8/1024K × 16/512K × 32) nvSRAM

■ Offered speeds

❐ 44-pin TSOP II: 25 ns and 45 ns

❐ 48-pin TSOP I: 30 ns and 45 ns

❐ 54-pin TSOP II: 25 ns and 45 ns

❐ 60-ball FBGA: 25 ns

Features

■ 16-Mbit nonvolatile static random access memory (nvSRAM)

❐ 25-ns, 30-ns and 45-ns access times

❐ Internally organized as 2048K × 8 (CY14X116L),

1024K × 16 (CY14X116N), 512K × 32 (CY14X116S)

❐ Hands-off automatic STORE on power-down with only a

small capacitor

❐ STORE to QuantumTrap nonvolatile elements is initiated by

software, device pin, or AutoStore on power-down

❐ RECALL to SRAM initiated by software or power-up

❐ 165-ball FBGA: 25 ns and 45 ns

Functional Description

The Cypress CY14X116L/CY14X116N/CY14X116S is a fast

SRAM, with a nonvolatile element in each memory cell. The

memory is organized as 2048K bytes of 8 bits each or 1024K

words of 16 bits each or 512K words of 32 bits each. The

embedded nonvolatile elements incorporate QuantumTrap

technology, producing the world’s most reliable nonvolatile

memory. The SRAM can be read and written an infinite number

of times. The nonvolatile data residing in the nonvolatile

elements do not change when data is written to the SRAM. Data

transfers from the SRAM to the nonvolatile elements (the

STORE operation) takes place automatically at power-down. On

power-up, data is restored to the SRAM (the RECALL operation)

from the nonvolatile memory. Both the STORE and RECALL

operations are also available under software control.

■ High reliability

❐ Infinite read, write, and RECALL cycles

❐ 1 million STORE cycles to QuantumTrap

❐ Data retention: 20 years

■ Sleep mode operation

■ Low power consumption

❐ Active current of 75 mA at 45 ns

❐ Standby mode current of 650 A

❐ Sleep mode current of 10 A

■ Operating voltages:

❐ CY14B116X: V_CC= 2.7 V to 3.6 V

❐ CY14E116X: V_CC= 4.5 V to 5.5 V

For a complete list of related documentation, click here.

■ Industrial temperature: –40 C to +85 C

■ Packages

❐ 44-pin thin small-outline package (TSOP II)

❐ 48-pin thin small-outline package (TSOP I)

❐ 54-pin thin small-outline package (TSOP II)

❐ 60-ball fine-pitch ball grid array (FBGA) package

❐ 165-ball fine-pitch ball grid array (FBGA) package

■ Restriction of hazardous substances (RoHS) compliant

Cypress Semiconductor Corporation

Document Number: 001-67793 Rev. *N

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised July 22, 2016

12 3 4 5 6 7...37

中文翻译

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与CY14B116N-BZ25XI相关器件

型号	品牌	获取价格	描述	数据表
CY14B116N-BZ25XIT	CYPRESS	获取价格	16-Mbit (2048K Ã 8/1024K Ã 16/512K Ã 32) n
CY14B116N-BZ25XIT	INFINEON	获取价格	nvSRAM (non-volatile SRAM)
CY14B116N-BZ45XI	CYPRESS	获取价格	16-Mbit (2048K Ã 8/1024K Ã 16/512K Ã 32) n
CY14B116N-BZ45XIT	CYPRESS	获取价格	16-Mbit (2048K Ã 8/1024K Ã 16/512K Ã 32) n
CY14B116N-Z30XI	CYPRESS	获取价格	16-Mbit (2048K Ã 8/1024K Ã 16/512K Ã 32) n
CY14B116N-Z30XI	INFINEON	获取价格	nvSRAM (non-volatile SRAM)
CY14B116N-Z30XIT	CYPRESS	获取价格	16-Mbit (2048K Ã 8/1024K Ã 16/512K Ã 32) n
CY14B116N-Z30XIT	INFINEON	获取价格	nvSRAM (non-volatile SRAM)
CY14B116N-Z45XI	CYPRESS	获取价格	16-Mbit (2048K Ã 8/1024K Ã 16/512K Ã 32) n
CY14B116N-Z45XI	INFINEON	获取价格	nvSRAM (non-volatile SRAM)

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