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CXK582000YM-85LL PDF预览

CXK582000YM-85LL

更新时间: 2024-02-10 19:55:10
品牌 Logo 应用领域
索尼 - SONY 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
11页 207K
描述
262144-word X 8-bit High Speed CMOS Static RAM

CXK582000YM-85LL 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP包装说明:TSOP1-R, TSSOP32,.8,20
针数:32Reach Compliance Code:unknown
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.92Is Samacsys:N
最长访问时间:85 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-G32JESD-609代码:e0
长度:18.4 mm内存密度:2097152 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
功能数量:1端口数量:1
端子数量:32字数:262144 words
字数代码:256000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:256KX8输出特性:3-STATE
可输出:YES封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1-R封装等效代码:TSSOP32,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V认证状态:Not Qualified
反向引出线:YES座面最大高度:1.2 mm
最大待机电流:0.00004 A最小待机电流:2 V
子类别:SRAMs最大压摆率:0.08 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:8 mm
Base Number Matches:1

CXK582000YM-85LL 数据手册

 浏览型号CXK582000YM-85LL的Datasheet PDF文件第2页浏览型号CXK582000YM-85LL的Datasheet PDF文件第3页浏览型号CXK582000YM-85LL的Datasheet PDF文件第4页浏览型号CXK582000YM-85LL的Datasheet PDF文件第5页浏览型号CXK582000YM-85LL的Datasheet PDF文件第6页浏览型号CXK582000YM-85LL的Datasheet PDF文件第7页 
CXK582000TM/YM/M-85LL/10LL  
Preliminary  
262144-word × 8-bit High Speed CMOS Static RAM  
For the availability of this product, please contact the sales office.  
Description  
CXK582000TM  
CXK582000YM  
The CXK582000TM/YM/M is a high speed CMOS  
static RAM organized as 262144-words by 8 bits.  
32 pin TSOP (PIastic)  
32 pin TSOP (PIastic)  
A
polysilicon TFT cell technology realized  
extremely low stand-by current and higher data  
retention stability.  
Special feature are low power consumption and  
high speed and board package line-up.  
The CXK582000TM/YM/M is a suitable RAM for  
portable equipment with battery back up.  
CXK582000M  
32 pin SOP (PIastic)  
Features  
Fast access time  
-85LL  
(Access time)  
85ns (Max.)  
100ns (Max.)  
40µA (Max.)  
24µA (Max.)  
-10LL  
Low standby current  
Low data retention current  
Single +5V supply: 4.5V to 5.5V.  
Low voltage date retention : 2.0V (Min.)  
Broad package line-up  
Block Diagram  
CXK582000TM/YM  
8mm × 20mm 32 pin  
A10  
A11  
A9  
TSOP Package  
525mil 32 pin  
SOP Package  
CXK582000M  
A8  
VCC  
Memory  
Matrix  
2048 × 1024  
A13  
Row  
Decoder  
Buffer  
A15  
A17  
A16  
A14  
A12  
A7  
GND  
Function  
262144 word x 8 bit static RAM  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
Structure  
I /O Gate  
Column  
Decoder  
Silicon gate CMOS IC  
Buffer  
Buffer  
OE  
WE  
I /O Buffer  
CE1  
CE2  
I/O1  
I/O8  
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by  
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the  
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.  
– 1 –  
E94234-ST  

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