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CXH49SFA10000H0QSWZZ PDF预览

CXH49SFA10000H0QSWZZ

更新时间: 2024-02-26 23:52:12
品牌 Logo 应用领域
京瓷/艾维克斯 - KYOCERA AVX 晶体
页数 文件大小 规格书
27页 1671K
描述
Crystal Units Surface Mount Type

CXH49SFA10000H0QSWZZ 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:ROHS COMPLIANT, RESISTANCE WELD, HERMATIC SEALED, METAL PACKAGE-2Reach Compliance Code:unknown
HTS代码:8541.60.00.50风险等级:5.84
晶体/谐振器类型:PARALLEL - FUNDAMENTAL驱动电平:10 µW
频率稳定性:0.02%频率容差:100 ppm
负载电容:12 pF安装特点:THROUGH HOLE MOUNT
标称工作频率:10 MHz最高工作温度:125 °C
最低工作温度:-40 °C物理尺寸:L11.0XB5.0XH3.5 (mm)/L0.433XB0.197XH0.138 (inch)
串联电阻:90 Ω表面贴装:NO

CXH49SFA10000H0QSWZZ 数据手册

 浏览型号CXH49SFA10000H0QSWZZ的Datasheet PDF文件第21页浏览型号CXH49SFA10000H0QSWZZ的Datasheet PDF文件第22页浏览型号CXH49SFA10000H0QSWZZ的Datasheet PDF文件第23页浏览型号CXH49SFA10000H0QSWZZ的Datasheet PDF文件第24页浏览型号CXH49SFA10000H0QSWZZ的Datasheet PDF文件第26页浏览型号CXH49SFA10000H0QSWZZ的Datasheet PDF文件第27页 
Handling Notes  
Vcc  
C
4
0.01  
R
R
1
C
C
2
C
5
2
OUT  
C
t
C
1
R
3
3
Select each circuit constant so that the adjustment ranges of upper and lower frequencies of this circuit are even on the  
basis of the frequency of a single crystal unit measured using a specified load capacity, and that the margin of ±8 to 10 10-6  
of the room temperature deviation of the crystal unit can be reserved.  
To prevent the decrease in the negative resistance, always connect the crystal unit to the base of the transistor. For  
transistors used for oscillation circuits, hfe and fT are important.  
To obtain the large negative resistance with small current consumption, select a transistor for high frequency amplification  
with hfe of over 250 and fT of 1GHz or more.  
(7) Transistor third overtone oscillation circuit  
The resonance circuit comprised of L2 and C3 is required on the emitter side for preventing fundamental mode crystal  
oscillation. Set the resonance frequency to a value higher than the intermediate between fundamental wave frequency and  
third overtone frequency.  
Use L1, referred to as an elongation coil, to connect the load capacitance of the oscillation circuit in series. R1 prevents  
self-excited oscillation by L1. Since it is difficult in general to design the oscillation circuit having adequate negative  
resistance in the overtone oscillation frequency band, there are no other effective means of obtaining adequate oscillation  
margin except for preventing the increase of load resonance resistance RL of the crystal unit.  
- 58 -  

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