5秒后页面跳转
CURM103-G PDF预览

CURM103-G

更新时间: 2024-02-16 15:14:45
品牌 Logo 应用领域
上华 - COMCHIP /
页数 文件大小 规格书
2页 121K
描述
SMD Ultra Fast Recovery Rectifier

CURM103-G 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
包装说明:R-PDSO-F2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:7.9配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 VJESD-30 代码:R-PDSO-F2
最大非重复峰值正向电流:30 A元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:200 V最大反向恢复时间:0.05 µs
子类别:Rectifier Diodes表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

CURM103-G 数据手册

 浏览型号CURM103-G的Datasheet PDF文件第2页 
SMD Ultra Fast Recovery Rectifier  
SMD Diodes Specialist  
CURM101-G Thru CURM107-G  
Reverse Voltage: 50 - 1000 Volts  
Forward Current: 1.0 Amp  
Features  
Mini SMA  
Ideal for surface mount applications  
Easy pick and place  
0.154(3.9)  
0.138(3.5)  
0.012(0.3) Typ.  
Plastic package has Underwriters Lab.  
flammability classification 94V-0  
Exceeds environmental standard MIL-S-  
19500/228  
0.071(1.8)  
0.055(1.4)  
Low leakage current  
Mechanical data  
0.126(3.2)  
0.110(2.8)  
Case: Mini SMA/SOD-123 molded plastic  
Terminals: solderable per MIL-STD-  
750, method 2026  
0.067(1.7)  
0.051(1.3)  
Polarity: Color band denotes cathode  
end  
0.035(0.9) Typ.  
0.035(0.9) Typ.  
Mounting position: Any  
Approx. Weight: 0.04 gram  
Dimensions in inches and (millimeter)  
Maximum Ratings and Electrical Characterics  
CURM CURM CURM  
CURM  
102-G  
CURM  
101-G  
CURM CURM  
Unit  
Symbol  
VRRM  
VDC  
Parameter  
105-G  
106-G  
107-G  
103-G  
104-G  
V
V
V
200  
400  
600  
50  
50  
35  
800  
1000  
Max. Repetitive Peak Reverse Voltage  
Max. DC Blocking Voltage  
Max. RMS Voltage  
100  
100  
70  
200  
140  
400  
280  
600  
420  
800  
560  
1000  
700  
VRMS  
Peak Surge Forward Current  
8.3ms single half sine-wave  
superimposed on rate load  
( JEDEC method )  
IFSM  
30  
A
1.0  
1.3  
Io  
A
V
Max. Average Forward Current  
Max. Instantaneous Forward Current  
at 1.0 A  
1.7  
75  
1.0  
VF  
Trr  
nS  
Reverse recovery time  
50  
Max. DC Reverse Current at Rated DC  
5.0  
150  
IR  
uA  
Blocking Voltage  
Ta=25 C  
Ta=100 C  
42  
°C/W  
°C  
R
JA  
Typical. Thermal Resistance (Note 1)  
Operating Junction Temperature  
Storage Temperature  
- 5 5 t o + 1 5 0  
- 5 5 t o + 1 50  
T j  
TSTG  
°C  
Note 1: Thermal resistance from junction to ambient.  
QW-BU007  
Rev. A  
Page 1  

与CURM103-G相关器件

型号 品牌 获取价格 描述 数据表
CURM104 COMCHIP

获取价格

SMD Ultra Fast Recovery Rectifier
CURM104-G COMCHIP

获取价格

SMD Ultra Fast Recovery Rectifier
CURM105 COMCHIP

获取价格

SMD Ultra Fast Recovery Rectifier
CURM105-G COMCHIP

获取价格

SMD Ultra Fast Recovery Rectifier
CURM106 COMCHIP

获取价格

SMD Ultra Fast Recovery Rectifier
CURM106-G COMCHIP

获取价格

SMD Ultra Fast Recovery Rectifier
CURM107 COMCHIP

获取价格

SMD Ultra Fast Recovery Rectifier
CURM107-G COMCHIP

获取价格

SMD Ultra Fast Recovery Rectifier
CURMT101-HF COMCHIP

获取价格

Low Profile SMD Ultra Fast Recovery Rectifiers
CURMT102-HF COMCHIP

获取价格

Low Profile SMD Ultra Fast Recovery Rectifiers