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CUDD8-08BKPBFREE PDF预览

CUDD8-08BKPBFREE

更新时间: 2024-11-26 10:03:43
品牌 Logo 应用领域
CENTRAL 二极管
页数 文件大小 规格书
2页 540K
描述
Rectifier Diode, 1 Element, 8A, 800V V(RRM),

CUDD8-08BKPBFREE 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.76
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.2 V最大非重复峰值正向电流:125 A
元件数量:1最高工作温度:150 °C
最大输出电流:8 A最大重复峰值反向电压:800 V
最大反向恢复时间:0.05 µs子类别:Rectifier Diodes
表面贴装:YESBase Number Matches:1

CUDD8-08BKPBFREE 数据手册

 浏览型号CUDD8-08BKPBFREE的Datasheet PDF文件第2页 
CUDD8-02  
CUDD8-04  
CUDD8-08  
www.centralsemi.com  
SURFACE MOUNT  
ULTRA FAST RECOVERY  
SILICON RECTIFIER  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CUDD8-02  
Series types are Silicon Ultra-Fast Recovery Rectifiers  
designed for surface mount ultra fast switching  
applications requiring a low forward voltage drop.  
To order devices on 24mm Tape and Reel (800/13”  
Reel), add TR13 suffix to part number.  
8 AMPS, 200 THRU 800 VOLTS  
MARKING CODE: FULL PART NUMBER  
D2PAK CASE  
FEATURES:  
UL Flammability Classification 94V-O  
High Reliability  
Superior Lot To Lot Consistency  
Ultra Fast Recovery Time  
High Voltage  
Low Forward Voltage  
High Current Capability  
High Surge Capacity  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
C
SYMBOL  
CUDD8-02  
CUDD8-04  
400  
CUDD8-08  
800  
UNITS  
Peak Repetitive Reverse Voltage  
DC Blocking Voltage  
V
200  
200  
140  
V
V
V
A
A
RRM  
V
400  
800  
R
RMS Reverse Voltage  
V
280  
560  
R(RMS)  
Average Forward Current (T =100°C)  
C
Peak Forward Surge Current, tp=8.3ms  
I
8.0  
O
I
125  
FSM  
Operating and Storage  
Junction Temperature  
T
T
-65 to +150  
°C  
J, stg  
Typical Thermal Resistance  
Typical Thermal Resistance  
Θ
3.0  
50  
°C/W  
°C/W  
JC  
JA  
Θ
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
CUDD8-02  
TYP MAX  
5.0  
CUDD8-04  
CUDD8-08  
SYMBOL  
TEST CONDITIONS  
TYP  
MAX  
10  
TYP  
MAX  
10  
UNITS  
µA  
µA  
V
I
I
V =Rated V  
-
-
-
-
-
R
R
RRM  
RRM  
V =Rated V  
, T = 150°C  
-
-
250  
0.975  
0.895  
25  
500  
1.3  
1.1  
25  
500  
1.5  
1.2  
50  
R
R
C
V
V
I =8.0A  
-
-
F
F
F
I =8.0A, T = 150°C  
-
-
-
V
F
C
t
I =0.5A, I =1.0A, I =0.25A  
-
-
-
ns  
rr  
F
R
rr  
C
V =4.0V, f=1.0MHz  
80  
-
80  
-
50  
-
pF  
J
R
R4 (19-February 2010)  

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