Silicon N-Channel Power MOSFET
CS6N70 A31R-G
R
○
General Description:
VDSS
700
V
A
CS6N70 A31R-G, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-251,
which accords with the RoHS standard.
ID
6
PD(TC=25℃)
RDS(ON)Typ
100
1.28
W
Ω
Features:
Fast Switching
Low ON Resistance(Rdson≤1.60Ω)
Low Gate Charge (Typical Data: 26nC)
Low Reverse transfer capacitances(Typical: 4.5pF)
100% Single Pulse avalanche energy Test
Halogen Free
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Parameter
Symbol
VDSS
Rating
Units
Drain-to-Source Voltage
700
V
A
Continuous Drain Current
6
ID
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
3.6
A
a1
24
A
IDM
Gate-to-Source Voltage
VGS
V
±30
a2
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
480
mJ
V/ns
W
EAS
a3
5.0
dv/dt
100
PD
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
0.8
150,–55 to 150
300
W/℃
℃
TJ,Tstg
TL
℃
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2017V01