Datasheet > CS30N20A8R

CS30N20A8R

更新时间： 2024-03-03 10:10:47

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	389K
描述
TO-220

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CS30N20A8R 数据手册

Silicon N-Channel Power MOSFET

CS30N20 A8R

○

General Description：

V_DSS

200

CS30N20 A8R, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the self-aligned planar Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency. The package form is

TO-220AB, which accords with the RoHS standard.

Features：

I_D

150

P_D(T_C=25℃)

R_DS(ON)Typ

mΩ

l Fast Switching

l Low ON Resistance(Rdson≤80mΩ)

l Low Gate Charge (Typical Data:38nC)

l Low Reverse transfer capacitances(Typical:24pF)

l 100% Single Pulse avalanche energy Test

Applications：

Power switch circuit of adaptor and charger.

Absolute（Tc= 25℃ unless otherwise specified）：

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

200

Continuous Drain Current

I_D

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current

18.9

120

I_DM

Gate-to-Source Voltage

V_GS

±30

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation

1050

V/ns

E_AS

5.0

dv/dt

150

P_D

Derating Factor above 25°C

Operating Junction and Storage Temperature Range

Maximum Temperature for Soldering

1.2

150，–55 to 150

300

W/℃

℃

T_J，T_stg

T_L

℃

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 7

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