Datasheet > CS20N60FA9R

CS20N60FA9R

更新时间： 2024-04-09 18:59:15

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	383K
描述
TO-220F

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CS20N60FA9R 数据手册

CS20N60F A9R

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Electrical Characteristics（Tc= 25℃ unless otherwise specified）：

OFF Characteristics

Rating

Typ.

Unit

Parameter

Test Conditions

Symbol

Min.

600

Max.

V_GS=0V, I_D=250µA

Drain to Source Breakdown Voltage

Bvdss Temperature Coefficient

V_DSS

ID=250uA,Reference25℃

0.6

V/℃

µA

ΔBV_DSS/ΔT_J

V_DS=600V, V_GS= 0V,

T_a= 25℃

V_DS=480V, V_GS= 0V,

T_a= 125℃

Drain to Source Leakage Current

I_DSS

100

-100

V_GS=+30V

V_GS=-30V

Gate to Source Forward Leakage

Gate to Source Reverse Leakage

I_GSS(F)

I_GSS(R)

ON Characteristics

Rating

Parameter

Test Conditions

Symbol

Units

Min.

Typ. Max.

V_GS=10V,I_D=10A

Drain-to-Source On-Resistance

Gate Threshold Voltage

R_DS(ON)

V_GS(TH)

0.35 0.45

Ω

V_DS= V_GS, I_D= 250µA

2.0

4.0

Pulse width tp≤300µs,δ≤2%

Dynamic Characteristics

Rating

Typ.

Parameter

Test Conditions

Symbol

Units

Min.

Max.

V_DS=15V, I_D=10A

Forward Trans conductance

Input Capacitance

g_fs

C_iss

C_oss

C_rss

2987

341

V_GS= 0V V_DS= 25V

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Resistive Switching Characteristics

Rating

Typ.

Parameter

Test Conditions

Symbol

Units

Min.

Max.

Turn-on Delay Time

Rise Time

t_d(ON)

t_d(OFF)

t_f

I_D=20A V_DD= 250V

R_G=10Ω

Turn-Off Delay Time

Fall Time

78.7

Total Gate Charge

Gate to Source Charge

Gate to Drain (“Miller”)Charge

Q_g

I_D=20A V_DD=400V

V_GS= 10V

Q_gs

Q_gd

13.5

22.3

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 2 of 10

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