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CS10N70FA9D PDF预览

CS10N70FA9D

更新时间: 2024-03-03 10:10:48
品牌 Logo 应用领域
华润微 - CRMICRO /
页数 文件大小 规格书
10页 224K
描述
TO-220F

CS10N70FA9D 数据手册

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CS10N70F A9D  
R
100  
10  
TRANSCONDUCTANCE MAY LIMIT  
CURRENT IN THIS REGION  
FOR TEMPERATURES  
ABOVE 25DERATE PEAK  
CURRENT AS FOLLOWS:  
é
25 ê  
ë
ù
ú
û
150 - TC  
I = I  
125  
VGS=10V  
1
1.00E-04  
1.00E-03  
Figure  
1.00E-02  
Pulse Width , Seconds  
Maximum Peak Current Capability  
3
1.00E-01  
1.00E+00  
1.00E+01  
1.00E-05  
t
6
14  
PULSE DURATION = 10μs  
DUTY FACTOR = 0.5%MAX  
Tc =25 ℃  
PULSED TEST  
VDS=30V  
12  
10  
8
2.5  
2
ID= 10A  
ID= 5A  
ID= 2.5A  
1.5  
1
6
4
0.5  
0
2
0
4
6
8
10  
12  
Volts  
14  
0
2
4
6
8
10  
12  
Vgs , Gate to Source Voltage Volts  
Vgs , Gate to Source Voltage  
Figure  
3
8
Typical Drain to Source ON Resistance vs Gate Voltage  
and Drain Current  
Figure  
7
Typical Transfer Characteristics  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
PULSED TEST  
Tc =25 ℃  
PULSED TEST  
VGS=10V ID=5A  
2.5  
2
VGS=10V  
1.5  
1
0.5  
0
0
2
4
6
8
10  
12  
-100  
-50  
0
50  
100  
150  
200  
Id , Drain Current , Amps  
Tj, Junction temperature ,C  
Figure 10 Typical Drian to Source on Resistance  
vs Junction Temperature  
Figure  
9
Typical Drain to Source ON Resistance  
vs Drain Current  
WUXI CHINA RESOURCES HUAJING MICROELEC TRONICS CO. , LTD.  
Page 5 of 10  
2015V01  

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