CS10N70F A9D
R
○
100
10
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
FOR TEMPERATURES
ABOVE 25℃ DERATE PEAK
CURRENT AS FOLLOWS:
é
25 ê
ë
ù
ú
û
150 - TC
I = I
125
VGS=10V
1
1.00E-04
1.00E-03
Figure
1.00E-02
Pulse Width , Seconds
Maximum Peak Current Capability
3
1.00E-01
1.00E+00
1.00E+01
1.00E-05
t
6
14
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25 ℃
PULSED TEST
VDS=30V
12
10
8
2.5
2
ID= 10A
ID= 5A
ID= 2.5A
1.5
1
6
4
0.5
0
2
0
4
6
8
10
12
,Volts
14
0
2
4
6
8
10
12
Vgs , Gate to Source Voltage , Volts
Vgs , Gate to Source Voltage
Figure
3
8
Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
Figure
7
Typical Transfer Characteristics
1.1
1.0
0.9
0.8
0.7
0.6
PULSED TEST
Tc =25 ℃
PULSED TEST
VGS=10V ID=5A
2.5
2
VGS=10V
1.5
1
0.5
0
0
2
4
6
8
10
12
-100
-50
0
50
100
150
200
Id , Drain Current , Amps
Tj, Junction temperature ,C
Figure 10 Typical Drian to Source on Resistance
vs Junction Temperature
Figure
9
Typical Drain to Source ON Resistance
vs Drain Current
WUXI CHINA RESOURCES HUAJING MICROELEC TRONICS CO. , LTD.
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2015V01