Datasheet > CS10N70FA9D

CS10N70FA9D

更新时间： 2024-03-03 10:10:48

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	224K
描述
TO-220F

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数据手册

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CS10N70FA9D 数据手册

CS10N70F A9D

○

1.15

1.2

1.1

1.05

0.9

0.8

0.7

0.95

0.9

VGS=0V

ID=250μA

VGS=0V

ID=250μA

-75 -50 -25

25 50 75 100 125 150 175

-100

-50

100

150

200

Tj, Junction temperature , C

Figure 11 Typical Theshold Voltage vs Junction Temperature

Figure 12 Typical Breakdown Voltage vs Junction Temperature

2500

V_GS=0V , f=1MHz

Ciss=Cgs+Cgd

Coss=Cds+Cgd

Crss=Cgd

2000

1500

1000

500

VDS=480V

I_D=10A

Ciss

Coss

Crss

Vds , Drain - Source Voltage , Volts

Qg , Total Gate Charge , nC

Figure 13 Typical Capacitance vs Drain to Source Voltage

Figure 14 Typical Gate Charge vs Gate to Source Voltage

100

STARTING Tj = 25℃

STARTING Tj = 150℃

+150℃

+25℃

-55℃

If R=0: t_AV=(L* I_AS) / (1.38V_DSS-V_DD

)

If R≠0: t_AV=(L/R) In[IAS*R/ (1.38V_DSS-V_DD)+1]

R equals total Series resistance of Drain circuit

V_GS=0V

0.1

0.4

0.5

0.6

0.7

0.8

0.9

1.1

Figure 16 Unclamped Inductive Switching Capability

1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01

Vsd , Source - Drain Voltage , Volts

tav , Time in Avalanche , Seconds

Figure 15 Typical Body Diode Transfer Characteristics

WUXI CHINA RESOURCES HUAJING MICROELEC TRONICS CO. , LTD.

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