CS10S100CT
Super Low Barrier High Voltage Power Rectifier
Chip Integration Technology Corporation
Main Product Characteristics
■ Outline
IF(AV)
VRRM
TJ
2x5A
Dimensions in inches(millimeters)
TO-220AB
K
symbol
Min
Max
L
ØP
100V
150OC
0.53V
A
A
B
0.398(10.1)
0.236(6.0)
0.579(14.7)
0.543(13.8)
0.143(3.63)
0.104(2.64)
0.335(8.5)
0.046(1.17)
0.028(0.71)
0.098(2.49)
0.176(4.47)
0.046(1.17)
0.102(2.6)
0.019(0.28)
0.147(3.74)
0.406(10.3)
0.252(6.4)
0.594(15.1)
0.551(14.0)
0.159(4.03)
0.112(2.84)
0.350(8.9)
0.054(1.37)
0.036(0.91)
0.102(2.59)
0.184(4.67)
0.054(1.37)
0.110(2.8)
0.021(0.48)
0.155(3.94)
F
C
D
E
B
C
V(Typ)
Marking code
F
G
G
H
I
1
2
3
C
■ Features
M
H
E
J
I
K
• Low forward voltage drop.
D
L
• Excellent high temperature stability.
• Fast switching capability.
M
N
ØP
J
N
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Alternate
Dimensions in inches(millimeters)
K
symbol
Min
Max
0.413(10.5)
0.268(6.8)
L
ØP
A
A
B
0.394(10.0)
0.228(5.8)
0.570(14.48) 0.625(15.87)
0.519(13.18) 0.558(14.18)
F
■ Mechanical data
C
D
E
B
C
0.089(3.5)
0.100(2.54)
0.330(8.38)
0.045(1.15)
0.029(0.75)
0.095(2.42)
0.160(4.07)
0.045(1.15)
0.080(2.04)
0.013(0.33)
0.148(3.75)
0.099(3.9)
0.120(3.04)
0.350(8.9)
0.060(1.52)
0.037(0.95)
0.105(2.66)
0.190(4.82)
0.055(1.39)
0.110(2.8)
• Epoxy : UL94-V0 rated flame retardant.
• Case : JEDEC TO-220AB molded plastic body.
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026.
• Polarity: As marked.
• Mounting Position : Any.
Marking code
F
G
G
H
I
1
2
3
M
H
E
J
I
K
D
L
M
N
ØP
0.019(0.52)
0.156(3.95)
J
N
PIN 2
• Weight : Approximated 2.25 gram.
PIN 1
PIN 3
■ Maximum ratings and electrical characteristics
Dimensions in inches and (millimeters)
Rating at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Marking code
Conditions
Symbol
CS10S100CT
CS10S100CT
UNIT
V
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
VRRM
VRWM
VRM
IO
100
Forward rectified current (total device)
10
A
A
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
Forward surge current (per diode)
IFSM
150
Peak repetitive reverse surge current
(per diode)
IRRM
2us - 1kHz
3
A
OC/W
OC
RθJC
Thermal resistance(1) (per diode)
Operating and Storage temperature
Junction to case
2
TJ, TSTG
-55 ~ +150
Parameter
Conditions
IF = 5A, TJ = 25OC
IF = 5A, TJ = 125OC
IF = 10A, TJ = 25OC
VR = VRRM TJ = 25OC
VR = VRRM TJ = 125OC
Symbol
VF
MIN.
TYP.
530
MAX.
UNIT
mV
670
560
820
0.2
25
Forward voltage drop (per diode)
IR
Reverse current (per diode)
mA
Note : 1.Thermal resistance from junction to case per leg, with heatsink size(1.35" x 0.95" x 0.18") Al-plate.
Document ID : DS-11K9D
Revised Date : 2015/08/04
Revision : C4
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