CS10S280CT-A
Super Low Barrier High Voltage Power Rectifier
Chip Integration Technology Corporation
Main Product Characteristics
■ Outline
IF(AV)
VRRM
TJ
2x5A
Dimensions in inches(millimeters)
TO-220AB
K
symbol
Min
Max
L
ØP
280V
175OC
0.64V
A
A
B
0.398(10.1)
0.236(6.0)
0.579(14.7)
0.543(13.8)
0.143(3.63)
0.104(2.64)
0.335(8.5)
0.046(1.17)
0.028(0.71)
0.098(2.49)
0.176(4.47)
0.046(1.17)
0.102(2.6)
0.019(0.28)
0.147(3.74)
0.406(10.3)
0.252(6.4)
0.594(15.1)
0.551(14.0)
0.159(4.03)
0.112(2.84)
0.350(8.9)
0.054(1.37)
0.036(0.91)
0.102(2.59)
0.184(4.67)
0.054(1.37)
0.110(2.8)
0.021(0.48)
0.155(3.94)
F
C
D
E
B
C
V(Typ)
Marking code
F
G
G
H
I
1
2
3
C
M
H
E
■ Features
J
I
K
D
L
• Low forward voltage drop.
M
N
ØP
• Excellent high temperature stability.
• Fast switching capability.
J
N
Alternate
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Dimensions in inches(millimeters)
K
symbol
Min
Max
0.413(10.5)
0.268(6.8)
L
ØP
A
A
B
0.394(10.0)
0.228(5.8)
0.570(14.48) 0.625(15.87)
0.519(13.18) 0.558(14.18)
F
■ Mechanical data
C
D
E
B
C
0.089(3.5)
0.100(2.54)
0.330(8.38)
0.045(1.15)
0.029(0.75)
0.095(2.42)
0.160(4.07)
0.045(1.15)
0.080(2.04)
0.013(0.33)
0.148(3.75)
0.099(3.9)
0.120(3.04)
0.350(8.9)
0.060(1.52)
0.037(0.95)
0.105(2.66)
0.190(4.82)
0.055(1.39)
0.110(2.8)
• Epoxy : UL94-V0 rated flame retardant.
• Case : JEDEC TO-220AB molded plastic body.
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026.
• Polarity: As marked.
• Mounting Position : Any.
Marking code
F
G
G
H
I
1
2
3
M
H
E
J
I
K
D
L
M
N
ØP
0.019(0.52)
0.156(3.95)
J
N
PIN 2
• Weight : Approximated 2.25 gram.
PIN 1
PIN 3
■ Maximum ratings and electrical characteristics
Dimensions in inches and (millimeters)
Rating at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Marking code
Conditions
Symbol
CS10S280CT-A
CS10S280CT
UNIT
V
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
VRRM
VRWM
VRM
IO
280
Forward rectified current (total device)
10
A
A
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
Forward surge current (per diode)
IFSM
280
Peak repetitive reverse surge current
(per diode)
IRRM
2us - 1kHz
3
A
OC/W
OC
RθJC
Thermal resistance(1) (per diode)
Operating and Storage temperature
Junction to case
2
TJ, TSTG
-55 ~ +175
Parameter
Conditions
IF = 5A, TJ = 25OC
IF = 5A, TJ = 125OC
IF = 10A, TJ = 25OC
VR = VRRM, TJ = 25OC
VR = VRRM, TJ = 125OC
IF = 0.5A, IR = 1A, IRR = 0.25A
IF = 1A, VR = 30V, di/dt = 100A/us, TJ = 25OC
Symbol
VF
MIN.
TYP.
640
MAX.
UNIT
mV
860
710
920
0.2
25
Forward voltage drop (per diode)
IR
trr
Reverse current (per diode)
mA
ns
25
28
30
Reverse recovery time (per diode)
35
Note : 1.Thermal resistance from junction to case per leg, with heatsink size(1.35" x 0.95" x 0.18") Al-plate.
Document ID : DS-11KFN
Revised Date : 2015/08/06
Revision : C4
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