Datasheet > CS10N70FA9D

CS10N70FA9D

更新时间： 2024-03-03 10:10:48

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	224K
描述
TO-220F

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CS10N70FA9D 数据手册

CS10N70F A9D

○

Electrical Characteristics（Tc= 25℃ unless otherwise specified）：

OFF Characteristics

Rating

Typ.

Symbol

Parameter

Test Conditions

Units

Min.

700

Max.

V_GS=0V, I_D=250µA

Drain to Source Breakdown Voltage

Bvdss Temperature Coefficient

V_DSS

ID=250uA,Reference25℃

V/℃

ΔBV_DSS/ΔT_J

0.74

V_DS= 700V, V_GS= 0V,

T_a= 25℃

V_DS=560V, V_GS= 0V,

Drain to Source Leakage Current

µA

I_DSS

100

T_a= 125℃

V_GS=+20V

V_GS=-20V

Gate to Source Forward Leakage

Gate to Source Reverse Leakage

µA

I_GSS(F)

I_GSS(R)

-10

ON Characteristics

Rating

Parameter

Test Conditions

Symbol

Units

Min.

Typ. Max.

0.78 0.9

4.0

V_GS=10V,I_D=5A

Drain-to-Source On-Resistance

Gate Threshold Voltage

R_DS(ON)

V_GS(TH)

Ω

V_DS= V_GS, I_D= 250µA

2.0

Pulse width tp≤300µs,δ≤2%

Dynamic Characteristics

Rating

Parameter

Test Conditions

Symbol

Units

Min.

Typ.

Max.

V_DS=15V, I_D=5.0A

Forward Trans conductance

Input Capacitance

g_fs

C_iss

C_oss

C_rss

1553

155

V_GS= 0V V_DS= 25V

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Resistive Switching Characteristics

Rating

Typ.

Parameter

Test Conditions

Symbol

Units

Min.

Max.

Turn-on Delay Time

Rise Time

t_d(ON)

t_d(OFF)

t_f

I_D=10.0A V_DD= 350V

V_GS= 10V R_G=9.1Ω

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate to Source Charge

Gate to Drain (“Miller”)Charge

Q_g

I_D=10.0A V_DD=350V

V_GS= 10V

Q_gs

Q_gd

WUXI CHINA RESOURCES HUAJING MICROELEC TRONICS CO. , LTD.

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