Datasheet > CRZ12(TE85L,Q,M)

CRZ12(TE85L,Q,M)

更新时间： 2024-11-21 15:29:59

品牌	Logo	应用领域
东芝 - TOSHIBA		光电二极管
页数	文件大小	规格书
5页	157K
描述
X35 PB-F DIODE S-FLAT MOQ=3000 V=12 PD=0.7W

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中文翻译

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技术参数
数据手册

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CRZ12(TE85L,Q,M) 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	Factory Lead Time：	12 weeks
风险等级：	5.72	Base Number Matches：	1

CRZ12(TE85L,Q,M) 数据手册

CRY62~CRZ47

TOSHIBA Zener Diode Silicon Epitaxial Type

CRY62~CRZ47

Applications:

Unit: mm

Communication, Control and

Measurement Equipment

Constant Voltage Regulation

Transient Suppressors

z Average power dissipation: P = 0.7 W

z Zener voltage: V = 6.2~47 V

z Suitable for compact assembly due to small surface-mount package

“S−FLAT ” (Toshiba package name)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Power dissipation

Symbol

Rating

Unit

700

°C

Junction temperature

−40 ~ 150

JEDEC

JEITA

―

Storage temperature range

stg

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

TOSHIBA

3-2A1A

Weight: 0.013 g (typ.)

operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Standard Soldering Pad

Unit: mm

1.2

2.8

2006-11-09

12 3 4 5

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